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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1126 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 5A *Low Saturation Voltage APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 120 V 120 V 7 V 10 A 15 A UNIT .cn mi e IC Collector Current-Continuous ICP Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 25mA; RBE= MIN TYP. 2SD1126 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 1.5 V VCE(sat)-2 VBE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A IC= 5A; IB= 10mA B 3.0 V Base-Emitter Saturation Voltage 2.0 V VBE(sat)-2 ICBO Base-Emitter Saturation Voltage IC= 10A; IB= 0.1A Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain VECF C-E Diode Forward Voltage Switching times w ww scs .i IF= 10A VCB= 120V; IE=0 VCE= 100V; RBE= IC= 5A; VCE= 3V .cn mi e 1000 0.8 8.0 3.5 V A A 100 10 20000 3.0 V ton toff Turn-on Time IC= 5A, IB1= -IB2= 10mA Turn-Off Time s s isc Websitewww.iscsemi.cn 2 |
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