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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD878 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) *High Power Dissipation *High Current Capability APPLICATIONS *High power amplifier applications. *High power switching applications. *DC-DC converter applications. *Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w MAX 100 60 7 15 7 115 UNIT V .cn mi e V V IC Collector Current-Continuous A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj 175 Tstg Storage Temperature Range -65~175 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD878 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.8 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product Switching Times w w w. sem isc IC= 4A; VCE= 4V IC= 10A; VCE= 4V IC= 1A; VCE= 4V .cn i 20 5 0.1 mA 70 IE= 0; VCB= 10V; ftest= 1.0MHz 150 pF 1.5 MHz ton Turn-on Time 2.5 s tstg Storage Time VCC= 50V, RL= 10,IB1= -IB2= 0.5A 3.5 tf Fall Time 1.2 isc Websitewww.iscsemi.cn |
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