View APT94N65B2C3_4471159.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

650V 94A APT94N65B2C3 APT94N65B2C3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C OLMOS O
Power Semiconductors
Super Junction MOSFET
T-MaxTM
* Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Extreme dv/dt Rated * Dual die (parallel) * Popular T-MAX Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
D G S
MAXIMUM RATINGS
Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
All Ratings per die: TC = 25C unless otherwise specified.
APT94N65B2C3S(G) 650 94 60 282 20 415 Volts Watts Amps UNIT Volts
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25C
TJ,TSTG Operating and Storage Junction Temperature Range TL dv/ dt IAR EAR EAS Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125C) Avalanche Current
2 2 ( Id = 7A, Vdd = 50V ) ( Id = 3.5A, Vdd = 50V )
-55 to 150 260 50 7 1 1800
C V/ns Amps mJ
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500A) Drain-Source On-State Resistance
3
MIN 650
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 60A)
0.03 1.0 100
0.035 50
Ohms A nA Volts
3-2009 050-8069 Rev B
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.8mA) 2.1
200 3 3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv
APT94N65B2C3(G)
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 94A @ 25C INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 94A @ 25C RG = 4.3
5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
4
MIN
TYP
MAX
UNIT pF
13940 5200 229 580 72 234 32 59 498 167 2684 4448 3391 5082
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
di
1 3
nC
ns
INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 94A, RG = 4.3 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 94A, RG = 4.3
J
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps
47 141 0.9 50
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -94A)
6
1.2
Volts V/ns ns C
/dt
dv
/dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -94A, /dt = 100A/s) Reverse Recovery Charge (IS = -94A, /dt = 100A/s) Peak Recovery Current (IS = -94A, di/dt = 100A/s)
di
960 1271 31 43 58 56
TYP MAX
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.15 31
4 See MIL-STD-750 Method 3471 5 Eon includes diode reverse recovery. 6 Maximum 125C diode commutation speed = di/dt 600A/s
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f . Pulse width tp limited by Tj max. 3 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
0.16 ZJC, THERMAL IMPEDANCE (C/W) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10
-5
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.7 0.5
Note:
3-2009
PDM
0.3
t1 t2
050-8069 Rev B
0.1 0.05 10
-4
SINGLE PULSE 10-3
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2
0.1
RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Typical Performance Curves
250 10 &15V 6.5V
APT94N65B2C3(G)
TC (C)
200 6V
TJ (C)
Dissipated Power (Watts)
ZEXT
0.0618 0.0230
0.0885 0.436
IC, DRAIN CURRENT (A)
150 5.5V 100 5V 50 4.5V 4V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 11, Low Voltage Output Characteristics
NORMALIZED TO V
GS
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 TJ= 25C 20 0 0 TJ= 125C 1 2 3 4 5 TJ= -55C 6 7 8 IDR, REVERSE
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.4 1.3 1.2 1.1 1 0.9 0.8
= 10V @ 47A
VGS = 10V VGS = 20V
0
40
80
120
160
200
100 90 ID, DRAIN CURRENT (A) 80 70 60 50 40 30 20 10 0 25
VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 12, Transfer Characteristics BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
.15
ID, DRAIN CURRENT (A) FIGURE 13, RDS(ON) vs Drain Current
1. 1
.05
1
.95
50
75
100
125
150
0.
-50
0
50
100
150
TC, CASE TEMPERATURE (C) FIGURE 6, Maximum Drain Current vs Case Temperature 3.0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 2.5 2.0 1.5 1 0.5 0 1.2 1.1 1 0.9 0.8 0.7 0.6
TJ, Junction Temperature (C) FIGURE 7, Breakdown Voltage vs Temperature
-50
0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, On-Resistance vs Temperature
-50
0 50 100 150 TC, Case Temperature (C) FIGURE 9, Threshold Voltage vs Temperature
050-8069 Rev B 3-2009
Typical Performance Curves
60,000
APT94N65B2C3(G)
Ciss ID, DRAIN CURRENT (A) 10,000 C, CAPACITANCE (pF)
GRAPH REMOVED
1,000 Coss 100 Crss
10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 10, Maximum Safe Operating Area 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 8 6 4 2 0 200 400 600 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, Gate Charges vs Gate-To-Source Voltage 700 600 td(on) and td(off) (ns) 500 400 300 200 100 0
V
DD G
0
100
200
300
400
500
600
I = 94A
VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 11, Capacitance vs Drain-To-Source Voltage 100 IDR, REVERSE DRAIN CURRENT (A)
D
TJ= +150C
VDS= 300V
VDS= 480V
TJ = =25C 10
1 0
0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 13, Source-Drain Diode Forward Voltage
V
DD G
0.3
00
= 400V R = 5W
td(off)
50 00
T = 125C J L = 100H
tf
= 400V
R
= 5W
tr, and tf (ns)
T = 125C J L = 100H
50 00 50
tr
td(on) 0 40 80 120 160 0 0 40 80 120 160
ID (A) FIGURE 14, Delay Times vs Current 12000
V
DD G
ID (A) FIGURE 15 , Rise and Fall Times vs Current 18000 16000
V
DD
= 400V
= 400V
R
= 5W
I = 94A
D
SWITCHING ENERGY (J)
10000 8000 6000 4000 2000 0
Eoff
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
SWITCHING ENERGY (uJ)
J
14000 12000 10000 8000 6000 4000 2000
T = 125C J L = 100H EON includes diode reverse recovery.
3-2009
Eon
Eon
050-8069 Rev B
0
75 100 125 150 ID (A) FIGURE 16, Switching Energy vs Current
25
50
0
10 20 30 40 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, Switching Energy vs Gate Resistance
0
Typical Performance Curves
APT94N65B2C3(G)
Gate Voltage
10% td(on) tr 90% 5% 10%
Switching Energy
T TJ = 125 C
90%
Gate Voltage
TJ = 125 C td(off) tf
90%
Collector Current
Collector Current
5%
Collector Voltage
Collector Voltage
0 10%
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAX(R) (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098)
e1 100% Sn Plated
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Source
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-8069 Rev B 3-2009
Gate Drain

▲Up To Search▲

Price & Availability of APT94N65B2C3

	To Download APT94N65B2C3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .