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Preliminary
SIM200D12SV3
VCES = 1200V Ic = 200A VCE(ON) typ. = 1.7V @ Ic = 200A
"HALF-BRIDGE" IGBT MODULE
Features
rench gate + field stopper, using Infineon chip design 10s Short circuit capability Low turn-off losses Short tail current for over 18KHz Positive VCE(on) temperature coefficient
Applications
AC & DC Motor controls VVVF inverters Optimized for high frequency inverter Type Welding machines SMPS UPS, Robotics
Package : V3
Absolute Maximum Ratings @ Tj=25
Symbol
VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque
(per leg)
Parameter
Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 TC = 80 TC = 25 TC = 80 Tc= VGE = 0V,
Condition
IC = 1.0mA
Ratings
1200 20 200(260) 400 200(260) 400 10
Unit
V V A A A A s V
AC 1 minute
2500 -40 ~ 150 -40 ~ 125 360 3.5 3.5
g Nm Nm
Electrical Characteristics @ Tj = 25
Symbol
V(BR)CES VCE(ON) VGE(th) ICES IGES
(unless otherwise specified) Min
1200 1.4 5.0 -
Parameters
Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Typ
1.7 5.8 -
Max
2.15 6.5 1.0
200
Unit
Test conditions
VGE = 0V, IC = 1.0mA
V
IC = 200A, VGE = 15V VCE = VGE, IC = 500A VCE = 1200V VGE = 20V
mA nA
VGE = 0V, VCE = 0V,
Preliminary
VFM Diode Forward Voltage Drop 1.65
SIM200D12SV3
2.15 V IC = 200A
Switching Characteristic @ Tj = 25
Symbol
Cies Coss Cres
(unless otherwise specified) Min
-
Parameters
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode Peak Reverse Recovery current Diode Reverse Recovery time
Typ
17306 810 360 300 108 660 156 160 250
Max
-
Unit
Test conditions
VCC = 30V, f = 1.0MHz VGE = 0V
pF
td(on) tr td(off) tf Irr trr
Tj = 125 , VCC = 600V ns IC = 200A,
RG = 3.6
VGE = 15V
A ns
Tj = 125 , VCC = 600V IF = 200A, VGE = 15V
RG = 3.6, di/dt=1200A/us
Thermal Characteristic Values
Symbol
R R R
Parameters
Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied)
Min
-
Typ
0.04
Max
0.10 0.20 -
Unit
Preliminary
SIM200D12SV3
Fig 1. Maximum DC Collector Current vs. Case Temperature
Fig 2. Power Dissipation vs. Case Temperature
Fig 3. Typ. IGBT Output Characteristics TJ = 25 ; tp = 80s
Fig 4. Typ. IGBT Output Characteristics TJ = 125 ; tp = 80s
Preliminary
SIM200D12SV3
Fig 5. Typ. Diode Forward Characteristics tp = 80s
Fig 6. Typ. Transfer Characteristics VCE = 50V; tp = 10s
Fig 7. Typical VCE vs. VGE TJ = 25
Fig 8. Typical VCE vs. VGE TJ = 125
Preliminary
SIM200D12SV3
Fig 9. Typ. Capacitance vs. VCE VGE = 0V; f = 1Mhz
Fig 10. Typical Gate Charge vs. VGE ICE = 120A; L = 600H
Fig 11. Typ. Switching Time vs. IC TJ = 125 ; L = 200H; VCE = 600V RG = 3.9; VGE = 15V
Fig 12. Typ. Switching Time vs. RG TJ = 125 ; L = 200H; VCE = 600V ICE = 200A; VGE = 15V
Preliminary
SIM200D12SV3
Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT)
Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE)
Preliminary
SIM200D12SV3
Package Outline (dimensions in mm)
OCT., 2008
Headquarter:
#602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789
Sales & Marketing
Marketing: clzhang@semiwell.com Sales: sales@semiwell.com Web-site: WWW. Semiwell.com

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