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APT47GA60JD40
600V High Speed PT IGBT
(R)
E
E
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TSO VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP (R) delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT47GA60JD40 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
file # E145592
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
600 87 47 139 30 283 139A @ 600V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 47A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 275 3000 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6338 Rev B 4 - 2009
VGS = 30V
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff td(on) tr td(off) tf Eon2 Eoff
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 47A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 47A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 47A RG = 4.74
6
APT47GA60JD40
Min Typ
6320 580 63 226 46 78 139 24 26 158 56 1119 693 23 28 190 109 1984 1037 J ns J ns A nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
TJ = +125C
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT VIsolation
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Min
-
Typ
-
Max
.44 1.21
Unit
C/W g in*lbf
2500
29.2
-
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6338 Rev B 4 - 2009
Typical Performance Curves
150
V
GE
APT47GA60JD40
350 300 IC, COLLECTOR CURRENT (A) 15V 13V 10V 9V
= 15V
IC, COLLECTOR CURRENT (A)
125 100 75 50 25 0
TJ= 55C TJ= 150C TJ= 25C TJ= 125C
250 200
8V 150 100 50 0 7V 6V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 47A C T = 25C
J
0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
100
20
IC, COLLECTOR CURRENT (A)
80
15
VCE = 120V VCE = 300V
60
10 VCE = 480V 5
40 TJ= 125C 20 TJ= 25C TJ= -55C
0
0
2 4 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
0 0 5 50 100 150 200 GATE CHARGE (nC) FIGURE 4, Gate charge 250
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
3
4 IC = 94A IC = 47A 2 IC = 23.5A 1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 94A IC = 47A
3
2 IC = 23.5A 1
0
6
8
10
12
14
16
0
0
25
50
75
100
125
150
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 120 100 80 60 40 20 0 052-6338 Rev B 4 - 2009
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95
0.90 0.85 0.80 0.75 0.70
IC, DC COLLECTOR CURRENT (A)
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
Typical Performance Curves
50 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 200
APT47GA60JD40
40 VGE = 15V
175
VGE =15V,TJ=125C
30
150
VGE =15V,TJ=25C
20
10
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
125
VCE = 400V RG = 4.7 L = 100H
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100
RG = 4.7, L = 100H, VCE = 400V
0
100
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
RG = 4.7, L = 100H, VCE = 400V TJ = 125C, VGE = 15V
140 120 100
80 tr, RISE TIME (ns) tr, FALL TIME (ns)
60
80 60 40 20 0
40
TJ = 25C, VGE = 15V
20
TJ = 25 or 125C,VGE = 15V
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
5000
0
EOFF, TURN OFF ENERGY LOSS (J)
Eon2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.7
G
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000 3500 3000 2500 2000 1500 1000 500 0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 5000
V = 400V CE V = +15V GE R = 4.7
G
V = 400V CE V = +15V GE R = 4.7
G
4000 TJ = 125C 3000
TJ = 125C
2000
1000
TJ = 25C
TJ = 25C
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 15000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE T = 125C
J
0
0
12000
Eon2,94A
SWITCHING ENERGY LOSSES (J)
4000
Eon2,94A
9000
Eon2,94A
3000
Eon2,94A
052-6338 Rev B 4 - 2009
6000
2000
Eoff,47A Eoff,47A Eon2,23.5A Eoff,23.5A
3000
Eon2,47A Eoff,47A Eoff,23.5A Eon2,23.5A
1000
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10,000 Cies IC, COLLECTOR CURRENT (A) 800
APT47GA60JD40
C, CAPACITANCE (pF)
100
1,000 Coes 100 Cres
10
1
0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.50 ZJC, THERMAL IMPEDANCE (C/W) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10
-5
D = 0.9
0.7 0.5
Note:
PDM
0.3
t1 t2
0.1 0.05 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-3 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
TJ (C)
TC (C)
Dissipated Power (Watts)
.0059
.2413
0.0802
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
.0925
.26312
.0828
052-6338 Rev B 4 - 2009
APT47GA60JD40
10% Gate Voltage td(on) TJ = 125C 90% tr 10% Collector Voltage 5%
A D.U.T.
Switching Energy
APT30DQ60
Collector Current
V CC
IC
V CE
5%
Figure 19, Inductive Switching Test Circuit
Figure 20, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 21, Turn-off Switching Waveforms and Definitions
052-6338 Rev B 4 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT47GA60JD40
30 42 320 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C
Min
Type
1.8 2.0 1.3
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.40 , THERMAL IMPEDANCE (C/W) 1.20 1.00 0.7 0.80 0.60 0.40 0.20 0 0.5
Note:
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
Min
-
Typ 21 105 115 3 125 465 7 60 830 23
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
PDM
t1 t2
0.3 0.1 0.05 10-5 10-4 SINGLE PULSE
JC
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.320 0.00278
Power (watts)
0.515
0.0421
0.375 Case temperature (C)
0.242
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6338 Rev B 4 - 2009
Dynamic Characteristics
140
TJ = 25C unless otherwise specified
200 trr, REVERSE RECOVERY TIME (ns)
APT47GA60JD40
T = 125C J V = 400V
R
120 IF, FORWARD CURRENT (A) TJ = 175C 100 80 60 40 20 0 TJ = 125C TJ = -55C TJ = 25C 0
60A 150
100
30A 15A
50
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 1400 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 400V
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35
T = 125C J V = 400V
0
1200 1000 800
R
30 25 20 15
R
60A
60A
30A 600 400 15A 200 0
30A 10 15A 5 0
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 IRRM 0.8 0.6 0.4 Qrr 0.2 0.0 Qrr trr
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 50 45 40 35 IF(AV) (A) 30 25 20 15 10 5
Duty cycle = 0.5 T = 175C
J
trr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
052-6338 Rev B 4 - 2009
50
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
0
1
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT47GA60JD40
+18V 0V
diF /dt Adjust
APT6017LLL
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9, Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6338 Rev B 4 - 2009

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