 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTA113TUPT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=1.0k, Typ. ) (2) SC-70/SOT-323 (3) 1.30.1 0.30.1 0.65 2.00.2 0.65 (1) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. 1.250.1 MARKING * TU7 0.05~0.2 E B 2 1 0.8~1.1 0~0.1 2.0~2.45 0.1Min. CIRCUIT TR R1 3 C Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maxim Rating System (IEC um 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 junction - soldering point Tamb 25 OC, Note 1 CONDITIONS -50 -50 -5 -100 200 -55 +150 -55 +150 140 VALUE V V V mA mW O UNIT C O C C/W 2005-06 O RATING CHARACTERISTIC ( CHDTA113TUPT ) CHARA CTERISTICS Tamb = 25 C unless otherwise specied. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -50uA IC= -5mA; IB= -0.25mA VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCB= -10.0V f=100MHz = MIN. -50.0 -50.0 -5.0 - - - 100 0.7 - - - - - - - 250 1.0 250 TY P . - - - -0.3 -0.5 -0.5 600 1.3 - K MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC= -1mA Not e 1.Pulse test: tp300uS; 0.02. RATING CHARACTERISTIC CURVES ( CHDTA113TUPT ) Typical Electrical Characteristics 1k 500 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current VCE=-5V Ta=100OC 25OC -40 C O Fig.2 Collector-emitter saturation voltage vs. collector current -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m -100u -500u -1m -5m -10m -50m -100m 100OC 25OC -40 OC lC/lB=10 200 100 50 20 10 5 2 1 -100 -500 -1m -5m -10m -50m -100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) |
Price & Availability of CHDTA113TUPT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |