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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTC114TMPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-723) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in single resistor(R1=10k, Typ. ) SOT-723 (3) (2) 0.17~0.27 0.4 1.15~1.25 0.4 (1) 0.75~0.85 0.27~0.37 CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. 0.17~0.27 0.75~0.85 MARKING * 41 0.11~0.14 0.45~0.55 Emitter Base 1 CIRCUIT 2 1.15~1.25 TR R1 3 Collector Dimensions in millimeters SOT-723 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-06 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS 50 50 5 100 Tamb 25 OC, Note 1 150 VALUE V V V UNIT mA mW O -55 +150 -55 +150 junction - soldering point 140 C O C C/W O RATING CHARACTERISTIC ( CHDTC114TMPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=50V VEB=4V IC/IB=10mA/1mA IC=1mA; VCE=5.0V IC=5mA, VCE=10.0V f=100MHz MIN. 50 50 5.0 - - - 100 7.0 - - - - - - - TYP. - - - MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 0.3 600 13.0 - uA uA V K MHz DC current gain Input resistor Transition frequency 300 10.0 250 Note 1.Pulse test: tp300uS; 0.02. RATING CHARACTERISTIC CURVES ( CHDTC114TMPT ) Typical Electrical Characteristics Fig.1 DC current gain vs. collector current 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter voltage vs. collector current COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100OC 25OC -40 OC lO/lI=10 VCE = 5V 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (uA) |
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