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FDP16N50 / FDPF16N50 500V N-Channel MOSFET
April 2007
FDP16N50 / FDPF16N50
500V N-Channel MOSFET Features
* 16A, 500V, RDS(on) = 0.38 @VGS = 10 V * Low gate charge ( typical 32 nC) * Low Crss ( typical 20 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDP16N50
500 16 9.6 64 30 780 16 20 4.5 200 1.59
FDPF16N50
16 * 9.6 64
Unit
V A A A V mJ A mJ V/ns
38.5 0.3 -55 to +150 300
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FDP16N50
0.63 0.5 62.5
FDPF16N50
3.3 -62.5
Unit
C/W C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FDP16N50 / FDPF16N50 Rev. B
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP16N50 FDPF16N50
Device
FDP16N50 FDPF16N50
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
500 -----3.0 ------
Typ.
-0.5 -----0.31 23 1495 235 20 40 150 65 80 32 8.5 14
Max Units
--1 10 100 -100 5.0 0.38 -1945 310 30 90 310 140 170 45 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 250V, ID = 16A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 400V, ID = 16A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16A VGS = 0V, IS = 16A dIF/dt =100A/s
(Note 4)
------
---490 5.0
9.2 37 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP16N50 / FDPF16N50 Rev. B
2
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FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
2
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
ID, Drain Current [A]
10
1
ID, Drain Current [A]
10
1
150 C 25 C -55 C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
o o
o
10
0
10
-1
* Notes : 1. 250s Pulse Test 2. TC = 25 C
-1
o
10
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.6
RDS(ON) [], Drain-Source On-Resistance
0.5
VGS = 10V
0.4
IDR, Reverse Drain Current [A]
10
1
VGS = 20V
0.3
150oC 25 C
o
* Note : TJ = 25 C
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test
0.2
0
5
10
15
20
25
30
35
40
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
4000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
10
VDS = 100V VDS = 250V VDS = 400V
3000
Capacitances [pF]
Coss
VGS, Gate-Source Voltage [V]
8
2000
Ciss
* Note : 1. VGS = 0 V 2. f = 1 MHz
6
4
1000
Crss
2
* Note : ID = 16A
0 -1 10
10
0
10
1
0
0
10
20
30
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP16N50 / FDPF16N50 Rev. B
3
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FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 8 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area - FDP16N50
Figure 9-2. Maximum Safe Operating Area - FDPF16N50
10
2
10
2
10 s 100 s
10 s
ID, Drain Current [A]
10
1
10
0
Operation in This Area is Limited by R DS(on)
1 ms 10 ms 100 ms DC
ID, Drain Current [A]
100 s
10
1
1 ms
Operation in This Area is Limited by R DS(on)
10 ms 100 ms DC
10
0
10
-1
* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-2
10
0
10
1
10
2
10
-2
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Currentvs. Case Temperature
20
15
ID, Drain Current [A]
10
5
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
FDP16N50 / FDPF16N50 Rev. B
4
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FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP16N50
10
0
(t), Thermal Response
D = 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1
10
-2
10
-1
PDM t1
* N o te s : 1 . Z J C ( t) = 0 .6 3
t2
o
JC
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
Z
s in g le p u ls e
10
-5
3 . T J M - T C = P D M * Z J C ( t)
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve - FDPF16N50
D = 0 .5
(t), Thermal Response
10
0
0 .2 0 .1 0 .0 5
10
-1
PDM t1
* N o te s :
0 .0 2 0 .0 1
t2
o
JC
1 . Z J C ( t) = 3 .3
C /W M a x .
10
-2
s in g le p u ls e
-5 -4 -3 -2
2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
Z
10
10
10
10
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FDP16N50 / FDPF16N50 Rev. B
5
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FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP16N50 / FDPF16N50 Rev. B
6
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FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP16N50 / FDPF16N50 Rev. B
7
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FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
) (45
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP16N50 / FDPF16N50 Rev. B
8
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FDP16N50 / FDPF16N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
FDP16N50 / FDPF16N50 Rev. B
9
15.87 0.20
www.fairchildsemi.com
FDP16N50 / FDPF16N50 500V N-Channel MOSFET
tm
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information Preliminary
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I26
No Identification Needed
Full Production
Obsolete
Not In Production
10 FDP16N50 / FDPF16N50 Rev. B
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