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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1777 DESCRIPTION *With TO-3 package *Low collector saturation voltage *Excellent safe operating area APPLICATIONS *For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 70 70 6 6 50 175 -55~175 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=70V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IC=0.5A ; VCE=12V 30 MIN 70 6 2SC1777 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.0 1.5 0.1 0.1 150 10 V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1777 Fig.2 outline dimensions (unindicated tolerance:0.10mm) 3 |
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