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| AOT8N60 / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150C ID = 8A RDS(ON) < 0.9 (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25C unless otherwise noted AOT8N60 Parameter Symbol AOTF8N60 VDS Drain-Source Voltage 600 VGS Gate-Source Voltage 30 Continuous Drain B Current Pulsed Drain Current Avalanche Current C C Units V V A A mJ mJ V/ns W W/ C C C o TC=25C TC=100C ID IDM IAR EAR G 8 5 32 3.2 150 300 5 147 1.17 -50 to 150 300 AOT8N60 65 0.5 0.85 8* 5* Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A A EAS dv/dt PD TJ, TSTG TL Symbol RJA RCS 50 0.4 AOTF8N60 65 2.5 Units C/W C/W C/W Maximum Case-to-Sink D,F RJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT8N60/AOTF8N60 Electrical Characteristics (T J=25C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=150C ID=250A, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=4A VDS=40V, ID=4A 3 3.8 0.74 12.5 0.73 1 8 32 912 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 87 6.2 3.1 1140 109 7.8 3.9 28.4 VGS=10V, VDS=480V, ID=8A 5.8 13.4 30 VGS=10V, VDS=300V, ID=8A, RG=25 IF=8A,dI/dt=100A/s,VDS=100V 63 69 51 270 3.3 1370 131 9.5 5.9 35 7 17 40 75 85 65 324 4.0 600 700 0.65 1 10 100 5 0.9 V V V/ C A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C o Parameter Conditions Min Typ Max Units Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/s,VDS=100V A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. L=60mH, IAS=3.2A, VDD=50V, RG=25, Starting TJ=25C Rev 0. July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10V 15 6.5V 6V ID (A) 10 ID(A) 10 125C 100 VDS=40V -55C 1 5 VGS=5.5V 25C 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 1.6 Normalized On-Resistance 1.4 RDS(ON) (m) 1.2 1.0 0.8 0.6 0.4 0 2 4 6 8 10 12 14 16 VGS=10V 0.1 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 3 2.5 2 1.5 1 0.5 0 -100 VGS=10V ID=4A -50 0 50 100 150 200 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 125C 1.0E+00 1.0E-01 1.0E-02 25C BVDSS (Normalized) 1.1 IS (A) 1 0.9 1.0E-03 1.0E-04 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.8 -100 TJ (oC) Figure 5: Break Down vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 VDS=480V ID=8A Capacitance (pF) 1000 Coss 100 10000 Ciss 12 VGS (Volts) 9 6 3 10 Crss 1 0 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics 10 40 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1 100 0 100 10s RDS(ON) limited 1ms 100 RDS(ON) limited 10s 10 ID (Amps) 10 ID (Amps) 100s 1ms 10ms DC 0.1s 1s 10s 1 100s TJ(Max)=150C TC=25C 1 10 VDS (Volts) 100 0.1 10ms 0.1s DC 1 0.1 TJ(Max)=150C TC=25C 0.01 0.01 1000 1 10 VDS (Volts) 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area for AOT8N60 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF8N60 (Note F) 10 8 Current rating ID(A) 6 4 2 0 0 25 50 75 100 125 150 TCASE (C) Figure 11: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT8N60/AOTF8N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=0.45C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse Ton T 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N60 (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=2.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N60 (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT1N60/AOTF1N60 Gate Charge Test Circuit & Waveform Vgs Qg + VD C 10V DUT Vgs Ig + VDC Vds Qgs Q gd - Charge Res istive Switching Test Circuit & Waveforms R L Vds Vds Vgs Rg Vgs DU T + VD C 90% Vdd 10% Vgs t d(o n) tr t on t d(off) t off tf Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI = 2 AR BVDSS + VDC Vdd - Id I AR Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs Qrr = - Idt Vds Vgs Ig Isd L Isd IF + VD C dI/dt IRM trr Vdd Vds - Vdd Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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