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| CHINA SEMICONDUCTOR CORPORATION Spec. No. Rev. PS-0701-003 E PRODUCT SPECIFICATION Model NoCSHV-UL60YLG4-A0 LED Type LED Package : Lambertian Emitting ColorYellow Viewing Angle120 Silicone LENS CUSTOMER APPROVED SIGNATURES APPROVED BY CHINA SEMICONDUCTOR CORPORATION Address:2FL. NO.909,Chung-Cheng Road, Chung-Ho City Taipei Hsien,Taiwan. Tel:886-2-2223-9696 Fax:886-2-2223-9377 http://www.csctw.com.tw Descriptions: : High Power VEGA CHECKED BY PREPARED BY OPTO PLUS TECHNOLOGIES CO.,LTD Address:696 Shun jiang Rd.,Ji Shan St.Shaoxing, ZheJiang,China Tel:86-0575-88623888 Fax:86-0575-88623112 CHINA SEMICONDUCTOR CORPORATION Model NoCSHV-UL60YLG4-A0 Features 1. High Luminous Output45 lm 2. Silicone Encapsulation 3. RoHs Compliant 4. Compatible Lead-Free Reflow Solder 5. ESD>8KV(HBM) 6. Standard Collimator Compatible Spec. No. Rev. PS-0701-003 E Device Selection Guide - Chip Part No. Material CSHV-UL60YLG4-A0 AlInGaP Package Outline Dimensions - Notes: Tolerance of measurement of Dimension: 0.25mm http://www.csctw.com.tw 7. Low thermal resistance (junction to Case)10 /W LED Lens Emitted Color Yellow Water Transparent Page 1/7 CHINA SEMICONDUCTOR CORPORATION Model NoCSHV-UL60YLG4-A0 Absolute Maximum Rating - Spec. No. Rev. PS-0701-003 E Power Dissipation Forward Current (DC) Peak Forward Current * Reverse Voltage Operating Temp. Storage Temp. Tstg -40 ~ +100 Electro-optical Characteristics (Ta=25) Parameter Forward Voltage Luminous Flux Viewing Angle Reverse Current Symbol VF v 2 1/2 http://www.csctw.com.tw IR * Pulse width 0.1 msec. duty 1/10 Min. ----27 --------- Typ. 2.4 45 120 ----- Max. 3 --------50 Unit V lm deg A (Ta=25) Parameter Symbol Pd IF IFP VR Topr Rating 1.05 350 500 5 -40 ~ +85 Unit W mA mA V Condition IF=350mA VR=5V Page 2/7 CHINA SEMICONDUCTOR CORPORATION Model NoCSHV-UL60YLG4-A0 Luminous Flux Rank Limits ( IF = 350mA ) unitlm Part No. CSHV-UL60YLG4-A0 Code Spec. No. Rev. PS-0701-003 E Dominant Wavelength Rank Limits ( IF = 350mA ) unitnm Part No. CSHV-UL60YLG4-A0 Code Notes: 1. Tolerance of measurement of luminous Flux :10 2. Tolerance of measurement of Dominant Wavelength :2nm 3. All data are measured by CSC's test equipment. 4. Please confirm with CSC salesman,if your request different from standard specification. G H J K min. 27 35 45 58 max. 35 45 58 70 min. 584.5 587.0 589.5 592.0 594.5 max. 587.0 589.5 592.0 594.5 597.0 Y1 Y2 Y3 Y4 Y5 http://www.csctw.com.tw Page 3/7 CHINA SEMICONDUCTOR CORPORATION Model NoCSHV-UL60YLG4-A0 Typical Electrical / Optical Charateristics Curves (Ta = 25 Unless Otherwise Noted) Spec. No. Rev. PS-0701-003 E Fig 1. Relative Luminous FLux vs. Forward Current 1.4 Normalized Relative Luminous Flux IF - Average Forward Current(mA) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 100 200 300 400 500 Fig 3. Maximum Forward Current vs. Ambient Temperature. Derating based on TJMAX =120C 400 IF - Forward Current(mA) 350 300 250 150 100 50 0 0 20 40 60 80 100 W/0 3= A-JR W/0 4= A-JR W/0 5= A-JR 200 Relative Light Output(%) Fig 5. Relative Spectral Power Distribution vs. Wavelength 1.0 Relative Spectral Power Distribution 0.8 0.6 0.4 0.2 0.0 400 Relative Luminosity Relative Luminosity 450 500 550 600 Wavelength (nm) )C( Fig 2. Forward Current vs. Forward Voltage 500 450 400 350 300 250 200 150 100 50 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 IF - Average Forward Current(mA) VF - Forward Voltage(Volts) Fig 4. Relative Light Output vs. Junction Temperature 200 180 160 140 120 100 80 60 40 20 0 -20 0 20 40 60 80 100 120 TA - Ambient Temperature Junction Temperature, Tj(C) Fig 6. Relative Luminosity Fig 6. Relative Luminosity vs. Radiation Angle vs. Radiation Angle 1 1 0.5 0.5 650 700 0 -100 -80 -60 -40 -20 0 20 40 60 80 100 -80 -60 -40 -20 0 20 40 60 80 100 Radiation Angle(Degrees) Radiation Angle(Degrees) http://www.csctw.com.tw Page 4/7 CHINA SEMICONDUCTOR CORPORATION Model NoCSHV-UL60YLG4-A0 Reflow Soldering Characteristics Spec. No. Rev. PS-0701-003 E Hand Soldering Characteristics Soldering temperature Soldering time 260 C 5 sec Notes: All temperatures refer to Solder Pad http://www.csctw.com.tw Page 5/7 CHINA SEMICONDUCTOR CORPORATION Model NoCSHV-UL60YLG4-A0 Package 1. Tube: 50pcs/tube CSC P/N: CSC Production number Flux: intensity grade Hue: wavelength grade Qty: quantity CSC P/N: Flux: Hue: Spec. No. Rev. PS-0701-003 E 2. anti-electrostatic bag: 10 tubes/ bag Product type: Vega Power CSC P/N: CSC Production number Flux: intensity grade Hue: wavelength grade Date code: production time Customer P/N: customer production number Qty: quantity Product Type: Flux: Customer P/N: Hue: Date code: QTY: QC: CSC P/N: 3. carton: 2 anti-electrostatic bags/carton P/N: production number Qty: quantity Date code: production time QTY: on tube ROHS on anti-electrostatic bag Product Type: Flux: Customer P/N: Hue: Date code: QTY: CSC P/N: ROHS QC: on carton http://www.csctw.com.tw Page 6/7 CHINA SEMICONDUCTOR CORPORATION Model NoCSHV-UL60YLG4-A0 Precautions for use Spec. No. Rev. PS-0701-003 E 1. Please use LEDS refer to JEDEC 2a(Industry Best Moisture Sensitivity Level) as below: Floor life conditions standard conditions time (hours) 30/60%RH 30/60%RH 2 696 +5/-0 accelerated Environment conditions time (hours) 120+1/-0 60/60%RH Notes:The standard soak time includes a default value of 24 hours for semiconductor exposure time between bake and bag and includes the maximum time allowed out of bag at the distributor's facility. 2.Please confirm the moisture card in the anti-electrostatic bag after opening package. If it showes 50%RH, LEDs should be performed baking treatment before uesd. (bake condition: At 125+5/-0 for 24 hours) 3.Any mechanical force or any excess vibration on LENS should be avoied during operating. 4. LED should be stored below 60%RH after opening package. 5. Please refer to fig3 of page4 to choose current drive to use. Ambient temperature will affect current. Note: The specifications are subject to change without notice. Please contact us for updated information. 2008.10.10 http://www.csctw.com.tw Page time 4 weeks 7/7 |
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