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STP3HNK90Z STF3HNK90Z
N-channel 900V - 0.35 - 3A - TO-220 - TO-220FP Zener-protected SuperMESHTM Power MOSFET
General features
Type STP3HNK90Z STP3HNK90Z

VDSS (@Tjmax) 900 V 900 V
RDS(on) < 0.42 < 0.42
ID 3A 3A
3 1 2
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
TO-220
TO-220FP
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP3HNK90Z STF3HNK90Z Marking P3HNK90Z F3HNK90Z Package TO-220 TO-220FP Packaging Tube Tube
August 2006
Rev 3
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www.st.com 15
Contents
STP3HNK90Z - STF3HNK90Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7
3 4 5
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STP3HNK90Z - STF3HNK90Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter Value STP3HNK90Z STF3HNK90Z V V V 3 (1) 1.89 (1) 12 (1) 25 0.2 3000 4.5 -55 to 150 2500 A A A W W/C V V/ns V C Unit
VDS VDGR VGS ID ID IDM(2) PTOT
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 3 1.89 12 90 0.72
800 800 30
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5) dv/dt
(3)
Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature
VISO TJ Tstg
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 3A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
Table 2.
Symbol
Thermal data
Parameter TO-220 Value TO-220FP 5 62.5 300 C/W C/W C Unit
Rthj-case Rthj-a Tl
Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose
1.38
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Electrical ratings
STP3HNK90Z - STF3HNK90Z
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 3 200 Unit A mJ
Table 4.
Symbol BVGSO
Gate-source zener diode
Parameter Test conditions Min. 30 Typ. Max. Unit V
Gate-source breakdown voltage Igs= 1mA (Open Drain)
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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Electrical characteristics
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125C Min. 900 1 50
10
Typ.
Max.
Unit V A A A V
IDSS
IGSS VGS(th) RDS(on)
Gate body leakage current VGS = 30V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 50A VGS = 10V, ID = 1.5 A 3 3.75 3.5
4.5 4.2
Table 6.
Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Test conditions Min. Typ. 19 690 71 14.4 88 23 28 42 27 26 5.7 13.9 35 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC
Forward transconductance VDS =15V, ID = 1.5A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge
VDS =25V, f=1 MHz, VGS=0
VGS=0, VDS =0V to 720V VDD=450 V, ID= 1.5 A, RG=4.7, VGS=10V (see Figure 18) VDD=720V, ID = 3A VGS =10V
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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Electrical characteristics
STP3HNK90Z - STF3HNK90Z
Table 7.
Symbol ISD ISDM VSD
(1) (2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3 A, VGS=0 ISD=3 A, di/dt = 100A/s, VDD=50V, Tj=25C (see Figure 20) ISD=3A, di/dt = 100A/s, VDD=50V, Tj=150C (see Figure 20) 494 2.4 9.8 628 3.2 10.2 Test conditions Min Typ. Max 3 12 1.6 Unit A A V ns C A ns C A
trr Qrr IRRM trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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STP3HNK90Z - STF3HNK90Z
Electrical characteristics
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
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Electrical characteristics Figure 7. Transconductance Figure 8.
STP3HNK90Z - STF3HNK90Z Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
8/15
STP3HNK90Z - STF3HNK90Z Figure 13. Source-drain diode forward characteristics
Electrical characteristics Figure 14. Normalized BVDSS vs temperature
Figure 15. Maximum avalanche energy vs temperature
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Test circuit
STP3HNK90Z - STF3HNK90Z
3
Test circuit
Figure 17. Unclamped Inductive waveform
Figure 16. Unclamped Inductive load test circuit
Figure 18. Switching times test circuit for resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load switching and diode recovery times
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STP3HNK90Z - STF3HNK90Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP3HNK90Z - STF3HNK90Z
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STP3HNK90Z - STF3HNK90Z
Package mechanical data
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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Revision history
STP3HNK90Z - STF3HNK90Z
5
Revision history
Table 8.
Date 09-Sep-2004 10-Aug-2006
Revision history
Revision 2 3 Complete document New template, no content change Changes
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STP3HNK90Z - STF3HNK90Z
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