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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION With TO-3PI package Complement to type 2SD2387 APPLICATIONS For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PI) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage INCH Base current Emitter-base voltage Collector current GE S AN Open collector EMIC OND TOR UC VALUE -140 -140 -5 -8 -0.1 UNIT V V V A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-5V IC=-12A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 5000 2000 170 30 MIN -140 TYP. 2SB1558 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT MAX UNIT V -2.5 -3.0 -5 -5 30000 |I |I V V A A A Transition frequency B C 9000-18000 hFE-1 Classifications 5000-12000 HAN INC SEM GE 15000-30000 OND IC TOR UC pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1558 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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