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DCR2560A85
Phase Control Thyristor Preliminary Information
DS5932-1.1 January 2009 (LN 26574)
FEATURES
Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 2560A 32500A 1500V/s 200A/s
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7500 7000 Conditions
* Higher dV/dt selections available
DCR2560A85* DCR2560A80 DCR2560A75 DCR2560A70
Tvj = -40 to 125 C C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available. o o *8200V @ -40 C, 8500V @ 0 C
Outline type code: A (See Package Details for further information)
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR2560A85
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
Fig. 1 Package outline
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DCR2560A85
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60 unless stated otherwise C
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
2555 4013 3710
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125 C VR = 0
Max. 32.5 5.28
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 83.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 74.0 Max. 0.00603 0.01024 0.01467 0.001 0.002 135 125 125 91.0 Units C/W C/W C/W C/W C/W C C C kN
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DCR2560A85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125 C To 67% VDRM, Tj = 125 gate open C, From 67% VDRM to 2x IT(AV) Gate source 30V, 10 , tr < 0.5s, Tj = 125 C
Repetitive 50Hz Non-repetitive
Min. -
Max. 300 1500 100 200
Units mA V/s A/s A/s
VT(TO)
Threshold voltage - Low level Threshold voltage - High level
500 to 1600A at Tcase = 125 C 1600 to 4000A at Tcase = 125 C 500A to 1600A at Tcase = 125 C 1600A to 4000A at Tcase = 125 C VD = 67% VDRM, gate source 30V, 10 tr = 0.5s, Tj = 25 C
-
0.9 1.18 0.65 0.46 3
V V m m s
rT
On-state slope resistance - Low level On-state slope resistance - High level
tgd
Delay time
tq
Turn-off time
IT = 3000A, Tj = 125 C, VR = 200V, dI/dt = 1A/s, dVDR/dt = 20V/s linear
1000
s
QS
Stored charge
IT = 3000A, Tj = 125 dI/dt - 1A/s, C, VRpeak ~5100V, VR ~ 3400V Tj = 25 VD = 5V C,
5150
7950
C
IL
Latching current
-
3
A
IH
Holding current
Tj = 25 RG-K = , ITM = 500A, IT = 5A C,
-
300
mA
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DCR2560A85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25 C At VDRM, Tcase = 125 C VDRM = 5V, Tcase = 25 C VDRM = 5V, Tcase = 25 C
Max. 1.5 0.3 400 20
Units V V mA mA
CURVES
7000 Instantaneous on-state current I T - (A) 6000 5000 4000 3000 2000 1000 0 1.0 2.0 3.0 4.0 5.0 Instantaneous on-state voltage VT - (V)
min 125 C max 125 C min 25 C max 25 C
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D. IT
Where
A = -0.224010 B = 0.1725829 C = 0.000292 D = 0.01039 these values are valid for Tj = 125 for IT 500A to 4200A C
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DCR2560A85
SEMICONDUCTOR
16 14 ( oC ) Mean power dissipation - (kW) 12 10 8 6 4 2 0 0 1000 2000 3000 Mean on-state current, IT(AV) - (A) 4000 180 120 90 60 30
130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 180 120 90 60 30
Fig.3 On-state power dissipation - sine wave
Maximum case temperature, T Mean power dissipation - (kW) 180 120 90 60 30
case
Fig.4 Maximum permissible case temperature, double side cooled - sine wave
16 14 12 10 8 6 4 2 d.c. 180 120 90 60 30
125 Maximum heatsink temperature, T Heatsink - ( C)
100
75
50
25
0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A)
0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 5000
Fig.5 Maximum permissible heatsink temperature, double side cooled - sine wave
Fig.6 On-state power dissipation - rectangular wave
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DCR2560A85
SEMICONDUCTOR
125 Maximum permissible case temperature , T case -( C) Maximum heatsink temperature T heatsink -(o C) d.c. 180 120 90 60 30
125 d.c. 180 120 90 60 30
100
100
75
75
50
50
25
25
0 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A)
0 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) 6000
Fig.7 Maximum permissible case temperature, double side cooled - rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled - rectangular wave
Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s) 1 3.01541 2 3 4 1.048955 0.983519 0.983519 0.059 0.059 0.059 0.205916 0.08069
16 Double side cooled
Double side cooled Anode side cooled Cathode side cooled
0.703874 1.904794 2.69023 13.79162
3.156003 4.092806 1.556555 1.623962 7.077369 3.483481 1.745839 2.634274 6.648601 8.436484 1.762119
Transient Thermal Impedance - Zth (C/kW)
14 12
Anode side cooled Cathode side cooled
i4
10 8 6 4 2 0 0.001
Z th
i1
[ Ri (1 exp(T / Ti )]
ARth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c.
Double side cooling AZth (z) A sine. rect. 180 0.44 0.31 120 0.49 0.43 90 0.55 0.49 60 0.60 0.55 30 0.64 0.61 15 0.66 0.64 Anode Side Cooling AZth (z) A sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.61 0.58 15 0.62 0.61 Cathode Sided Cooling AZth (z) A sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.60 0.58 15 0.62 0.60
0.01
0.1 Time (s)
1
10
100
Fig.9 Maximum (limit) transient thermal impedance - junction to case ( C/kW)
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DCR2560A85
SEMICONDUCTOR
100
10
35 30 Conditions: Tcase = 125C VR =0 Pulse width = 10ms
80
I2t ITSM
Surge current, ITSM- (kA)
25 20 15 10 5 0 1 10
Surge current, ITSM - (kA)
8
40 Conditions: Tcase= 125C VR = 0 half-sine wave 1 10
4
20
2
0
100
0 100
Number of cycles
Fig.10 Multi-cycle surge current
Pulse width, tP - (ms)
Fig.11 Single-cycle surge current
41000 36000 31000 Stored Charge, Qs - (uC) 26000 21000
QSmin = 5146.8*(di/dt)0.5188
800
QSmax = 7950.1*(di/dt)0.4626
700 - (A) IRRmax = 63.604*(di/dt)0.7474 600 500 400 300
Conditions:
Reverse recovery current, I
RR
IRRmin = 51.42*(di/dt)0.7839
16000 11000 6000 1000 0 5 10 15 20 25 30
Conditions : O Tj = 125 C, VRpeak ~ 5100V VRM ~ 3400V snubber as appropriate to control reverse voltage
200 100 0 0 5 10
Tj = 125 C, VRpeak ~ 5100V VRM ~ 3400V snubber as appropriate to control reverse volts
O
Rate of decay of on-state current, di/dt - (A/us)
15
20
25
I t (MA s)
60
6
2
2
30
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
Fig.13 Reverse recovery current
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DCR2560A85
SEMICONDUCTOR
10 9
Pulse Width us 100 200 500 1000 10000 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 -
Gate trigger voltage, VGT - (V)
8 7 6 5 4 3 2 1 0 0
400 150 125 100 25 -
Upper Limit
Preferred gate drive area
Tj = 125 C
o
Tj = 25oC
Tj = -40oC
Lower Limit
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C
25
Gate trigger voltage, VGT - (V)
20
15
10
5
0 0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR2560A85
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: A
Fig.16 Package outline
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DCR2560A85
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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