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| EID1415A1-12 UPDATED 07/12/2007 14.40-15.35 GHz 12-Watt Internally-Matched Power FET FEATURES * 14.40-15.35 GHz Bandwidth * Input/Output Impedance Matched to 50 Ohms * +41.0 dBm Output Power at 1dB Compression * 6.0 dB Power Gain at 1dB Compression * 25% Power Added Efficiency * Hermetic Metal Flange Package * 100% Tested for DC, RF, and RTH DESCRIPTION The EID1415A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics' unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ 3200mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ 3200mA Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3200mA f = 14.40-15.35GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 1 MIN 40.0 5.0 TYP 41.0 6.0 MAX UNITS dBm dB 0.6 25 3800 6000 -1.2 2.2 4800 8000 -2.5 2.5 o dB % mA mA V C/W f = 14.40-15.35GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2007 EID1415A1-12 UPDATED 07/12/2007 14.40-15.35 GHz 12-Watt Internally-Matched Power FET PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 135 -21 40dBm o 175 C o -65 to +175 C ABSOLUTE MAXIMUM RATING1,2 SYMBOLS CONTINUOUS2 10V -4.5V 45mA -7 @ 3dB Compression 175 oC -65 to +175 oC 60W Vds Vgs Igsf Igsr Pin Tch Tstg Pt 60W Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN). PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 3200mA S11 and S22 6 0. Swp Max 16.5GHz 2. 0 1.0 20 S21 and S12 -1.0 -0.8 0.8 -0 .6 -3 .0 0 4. 2 -0. 5.0 S21 and S12 (dB) -4 .0 -5. 0 -10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0. - -0 .6 S[2,2] * EID1415_12 -0.8 .0 -2 -1.0 FREQ (GHz) --- S11 --MAG ANG 13.50 13.75 14.00 14.25 14.50 14.75 15.00 15.25 15.50 15.75 16.00 0.775 0.717 0.635 0.524 0.378 0.229 0.106 0.085 0.151 0.200 0.222 11.290 -5.020 -23.800 -45.990 -72.060 -103.790 -153.980 102.660 47.090 10.580 -23.750 -3 .0 S[1,1] * 4 EID1415_12 0. 2. 0 4 Swp Min 13.5GHz -4 .0 -5. 0 0 3. 0 4. 5.0 -0. 2 -10.0 -0 .0 -2 .4 0. 4 0 3. 0 10.0 DB(|S[2,1]|) * EID1415_12 DB(|S[1,2]|) * EID1415_12 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 -20 0.2 -40 14 14.5 15 15.5 16 6 0. Frequency (GHz) 0.8 1.0 --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 1.415 1.579 1.786 1.985 2.140 2.226 2.248 2.199 2.140 2.054 1.955 9.610 -10.630 -33.500 -58.350 -85.100 -112.700 -140.510 -167.310 166.000 139.280 112.660 0.025 0.028 0.033 0.039 0.044 0.047 0.051 0.050 0.046 0.043 0.039 35.410 6.450 -21.300 -52.540 -86.110 -117.710 -146.950 -178.820 150.110 117.830 77.460 0.521 0.492 0.453 0.407 0.346 0.273 0.210 0.171 0.183 0.232 0.303 102.860 87.150 69.220 49.100 25.420 -3.070 -37.440 -80.600 -129.030 -169.440 160.700 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revised July 2007 EID1415A1-12 UPDATED 07/12/2007 14.40-15.35 GHz 12-Watt Internally-Matched Power FET Power De-rating Curve Power Dissipation vs. Temperature 70 60 Total Power Dissipation (W) 50 40 30 20 10 0 0 25 50 75 100 125 Case Temperature (C) 150 175 Safe Operating Region Potentially Unsafe Operating Region Typical Power Data (VDS = 10 V, IDSQ = 3200 mA) 43 42 P-1dB (dBm) P-1dB & G-1dB vs Frequency 10 9 G-1dB (dB) 41 P-1dB (dBm) 40 39 38 37 14.4 G-1dB (dB) 8 7 6 5 4 15.4 14.6 14.8 15.0 15.2 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised July 2007 EID1415A1-12 UPDATED 07/12/2007 14.40-15.35 GHz 12-Watt Internally-Matched Power FET PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified SOURCE Excelics EID1415A1-12 .024 .421 .827.010 .669 .120 MIN YYWW SN .120 MIN .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ORDERING INFORMATION Part Number EID1415A1-12 Notes: Grade1 Industrial fTest (GHz) 14.40-15.35 GHz P1dB (min) 40.0 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2007 |
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