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| 15 10V 12 4V 6V 3V 3.5V 10 8 Vds=5V Id (A) 9 6 Id(A) 6 Vgs=2.5V 3 2 4 125C 25C 0 0 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics 1 3.5 250 1.8 270 Vgs=10V Id=1.6A Normalized On-Resistance Vgs=2.5V 200 1.6 1.4 1.2 1 0.8 1.7 Rds(on) (m:) 150 Vgs=4.5V 100 Vgs=10V 50 0 2 4 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 180 Id=1.6A 160 0 25 50 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 3 3.6 0.4 Vgs=4.5V 1.2 Id=1.5A 2.8 Vgs=2.5V 2.1 3 Id=1A 17.4 21 2.1 9.1 11 75 100 125 150 175 3.4 4 Rds(on) (m:) 140 Is (A) 125C 120 100 80 60 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 125C 25C 25C 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=15V Id=1.6A 4 400 350 Capacitance (pF) 300 Ciss 250 200 150 100 50 Coss Crss Vgs (Volts) 3 2 1 0 0 0.5 1.5 2 2.5 3 Qg (nC) Figure 7: Gate-Charge Characteristics 1 3.5 0 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 270 100.0 Tj(max)=150C Ta=25C 20 Tj(max)=150C Ta=25C 1.7 3.6 15 10.0 Id (Amps) Power (W) 100Ps 1ms Rds(on) limited 0.1s 10Ps 10 1.0 1s 10s 0.1 0.1 DC 1 10ms 10 100 5 0 0.001 13 0.01 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 |
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