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 FPD6836P70
LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
FEATURES:
* * * * * * 22 dBm Output Power (P1dB) 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz Useable Gain to 18 GHz
Datasheet v3.0
PACKAGE:
GENERAL DESCRIPTION:
The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications.
TYPICAL APPLICATIONS:
* * * * Gain blocks and medium power stages WiMax (2-11GHz) WLAN 802.11a (5.8GHz) Point-to-Point Radio (to 18GHz)
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression Small Signal Gain Power-Added Efficiency
SYMBOL
P1dB SSG PAE
CONDITIONS
VDS = 5 V; IDS = 55mA VDS = 5 V; IDS = 55mA VDS = 5 V; IDS = 55mA POUT = P1dB
MIN
TYP
22
MAX
UNITS
dBm dB %
14
16 45
Maximum Stable Gain (S21/S12) f = 12 GHz f = 18 GHz Noise Figure Output Third-Order Intercept Point
MSG
VDS = 5 V; IDS = 55mA 15 12
NF IP3
VDS = 5 V; IDS = 55mA, VDS = 5V; IDS = 55mA POUT = 10 dBm SCL
0.8 32
dB dBm
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistance
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| RJC
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.2 mA IGS = 0.36mA IGD = 0.36 mA
90
105 215 140 1
135
mA mA mS
10 1.3
A V V V C/W
0.7 12 14.5
1.0 14 16 275
Note: TAMBIENT = 22C; RF specification measured at f = 5.8 GHz using CW signal (except as noted)
1
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FPD6836P70
Datasheet v3.0
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current 2 RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation 3 Simultaneous Combination of Limits 2 or more Max. Limits 80% PIN TCH TSTG PTOT Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below 16dBm 175C -40C to 150C 550mW
1
SYMBOL
VDS VGS IDS IG
TEST CONDITIONS
-3V < VGS < +0V 0V < VDS < +8V For VDS < 2V Forward or reverse current
ABSOLUTE MAXIMUM
8V -3V IDSS 10mA
Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22C: PTOT= 550mW - (1/ RJC) x TPACK where TPACK= source tab lead temperature above 22C Example: For a 65C carrier temperature: PTOT = 550mW - (3.6 x (65 - 22)) = 323mW
BIASING GUIDELINES:
* Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD6836P70. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B bias of 25-33% IDSS offers an optimised solution for NF and OIP3.
* *
2
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Tel: +44 (0) 1325 301111
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FPD6836P70
Datasheet v3.0
TYPICAL FREQUENCY RESPONSE
FPD6836P70 Biased @ VD = 5V ID = 55mA
30
MSG
FPD6836P70 Bias VD = 5V, ID = 50mA
5 4.5 4 3.5 3 Noise Figure
25
S21
MSG &
20 15 10 5 0 1 2 34 5 6 78 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz)
Mag S21
2.5 2 1.5 1 0.5 0
1
2
3
4
5
6
7
8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
NOTE: Tuned Noise figure variation against frequency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50mA. The test devices were tuned for minimum noise figure using tuners at the device input and output ports.
TYPICAL RF PERFORMANCE
Power Transfer Characteristics VDS = 5V, IDS = 55mA at f = 5.8GHz
70.0%
4.00 23.0 3.50
Pout (dBm) Comp Point
Drain Efficiency and PAE
70.0%
60.0%
PAE
Eff.
60.0%
21.0
3.00
Gain Compression (dB)
Output Power (dBm)
19.0 17.0 15.0
2.50 2.00 1.50 1.00
PAE (%)
40.0%
40.0%
30.0%
30.0%
13.0 0.50 11.0 9.0 -3 -1 1 3 5 7 9 11 13 0.00 -0.50
20.0%
20.0%
10.0%
10.0%
0.0% -3 -1 1 3 5 7 9 11 13
0.0%
Input Power (dBm)
Input Power (dBm)
Typical Intermodulation Performance VDS = 5V, IDS = 55mA at f = 5.8GHz
12
Pout (dBm)
-38.00
3rds (dBc)
10
Output Power (dBm)
-43.00
8 -48.00 6
3rd Order IM Products (dBc)
-53.00 4
2 -10.3 -9.3 -8.3 -7.4 -6.3 -5.3 -4.4 -3.4 -2.4
-58.00
Inpur Power (dBm)
NOTE: Typical Power, Efficiency and Intermodulation is shown above. The devices were biased nominally at VDS = 5V, IDS = 55mA at a test frequency of 5.8 GHz. The test devices were Tuned using slide tuners at the input and the output ports of the device.
3
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Drain Efficiency (%)
50.0%
50.0%
FPD6836P70
Datasheet v3.0
TEMPERATURE RESPONSE:
FPD6836P70 Gain & Powe r Variation ove r Te mpe rature VDS = 5.0V IDS = 55mA at f = 5.8GHz
FPD6836P70 Inte rmodulation Variation ove r Te mpe rature VDS = 5.0V IDS = 55mA at f = 5.8GHz
21.00 18.00 20.00 18.00 17.00 16.00 15.00 16.00 15.00 14.00 19.00
Intermodulation Products (dBc)
19.00
22.00
-30.00
IM3
-35.00
17.00
P1dB (dBm)
SSG (dB)
-40.00
-45.00
SSG
14.00 -40 -20 0
P1dB
20 40 60 80
13.00 12.00
-50.00 -40 -20 0 20 40 60 80
Temperature (C)
Temperature (C)
NOTE: Typical power, gain and Inter-modulation variation over temperature is shown above. The devices were biased nominally at VDS = 5V, IDS = 55mA at a test frequency of 5.8 GHz on eval board. The eval board is tuned for minimum noise and maximum gain. The 1dB compression point is lower than the typical number due to the change in matching.
NOISE PARAMETERS:
Bias 5V, 50mA Freq (GHz) 0.90 1.80 2.40 2.60 2.80 3.20 4.00 5.00 5.50 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 Rn/50 0.165 0.176 0.158 0.159 0.160 0.156 0.141 0.120 0.114 0.107 0.096 0.100 0.121 0.138 0.187 0.239 0.355 0.461 0.604
Mag 0.747 0.623 0.795 0.640 0.670 0.617 0.542 0.465 0.431 0.366 0.262 0.188 0.135 0.162 0.183 0.270 0.343 0.431 0.573
Angle 15.70 24.95 37.45 47.15 47.90 51.20 68.70 85.00 91.10 101.15 122.10 153.60 -165.60 -126.80 -85.95 -68.40 -50.25 -43.95 -25.80
4
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD6836P70
Datasheet v3.0
REFERENCE DESIGN 5.15 TO 5.85 GHZ:
FREQUENCY
Gain N.F. P1dB IP3 S11 S22 Vd Vg Id
GHZ
dB dB dBm dBm dB dB V V mA
5.5
20
FPD6836P70 5.5GHz Eval Board Biased @ 5V, 55mA
DB(|S(2,1)|)
16 1.0 19.5
dB
15 10 5 0
DB(|S(1,1)|) DB(|S(2,2)|)
30 -6 -26 5 -0.4 to -0.6 55
-5 -10 -15 -20 -25 -30 2 3 4 5 6 Frequency (GHz) 7 8 9
SCHEMATIC
MTEE ID=TL22 W1=150 mil W2=100 mil W3=220 mil
2 2 3 1 3 1
CAP ID=C2 C=33 pF
MTEE ID=TL10 W1=45 mil W2=70 mil W3=45 mil
1 3 2
MLIN ID=TL2 W=70 mil L=420 mil
MTEE ID=TL9 W1=70 mil W2=40 mil W3=40 mil
1 3 2
MLIN ID=TL3 W=40 mil L=100 mil
MLIN ID=TL19 W=100 mil L=100 mil
MLIN ID=TL17 W=150 mil L=120 mil
MTEE ID=TL21 W1=150 mil W2=45 mil W3=45 mil
1 2
CAP ID=C4 C=33 pF
PORT P=1 Z=50 Ohm RES ID=R1 R=20 Ohm MLIN ID=TL6 W=45 mil L=30 mil
SUBCKT ID=Q1 NET="FET"
MLEF ID=TL1 W=40 mil L=190 mil
MLEF ID=TL11 W=220 mil L=380 mil
MLIN ID=TL16 W=5 mil L=310 mil
PORT P=3 Z=50 Ohm MRSTUB2 ID=TL20 Ri=20 mil Ro=268 mil Theta=90 Deg MLIN ID=TL14 W=50 mil L=100 mil MLIN ID=TL15 W=50 mil L=50 mil
MLIN ID=TL5 W=5 mil L=280 mil
MRST UB2 ID=TL8 Ri=20 mil Ro=350 mil Theta=90 Deg CAP ID=C1 C=33 pF
CAP ID=C5 C=33 pF
MLIN ID=TL4 W=50 mil L=100 mil DCVS ID=VG V=-0.5 V
CAP ID=C7 C=1000000 pF
DCVS ID=VD V=5 V
5
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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FPD6836P70
Datasheet v3.0
BOARD LAYOUT
33pF 20 Ohms
Q1
Q1
33pF
P1
33pF 33pF 0.01uF 0.01uF
P2
1.0uF
1.0uF
6
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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FPD6836P70
Datasheet v3.0
S-PARAMETERS BIASED @ 5V, 55mA:
FREQ[GHz] 0.500 0.750 1.000 1.250 1.500 1.750 2.000 2.250 2.500 2.750 3.000 3.250 3.500 3.750 4.000 4.250 4.500 4.750 5.000 5.250 5.500 5.750 6.000 6.250 6.500 6.750 7.000 7.250 7.500 7.750 8.000 8.250 8.500 8.750 9.000 9.250 9.500 9.750 10.000 10.250 10.500 10.750 11.000 11.250 11.500 11.750 12.000 12.250 12.500 12.750 13.000 S11m 0.976 0.953 0.925 0.894 0.860 0.827 0.796 0.767 0.742 0.718 0.694 0.672 0.650 0.629 0.614 0.600 0.587 0.571 0.555 0.540 0.529 0.521 0.511 0.504 0.499 0.496 0.493 0.492 0.491 0.483 0.486 0.483 0.479 0.475 0.473 0.473 0.476 0.483 0.488 0.495 0.507 0.521 0.539 0.560 0.581 0.603 0.626 0.645 0.662 0.675 0.685 S11a -20.9 -31.4 -41.3 -51.2 -60.7 -69.7 -78.2 -86.3 -93.6 -100.5 -106.8 -112.6 -117.8 -122.6 -127.3 -132.1 -136.8 -142.0 -147.0 -152.4 -158.0 -163.8 -170.2 -176.6 177.0 170.4 163.9 157.5 151.2 145.5 140.4 135.3 130.8 126.5 122.5 118.4 114.1 109.1 103.4 97.7 91.7 85.7 79.8 74.3 69.2 64.8 60.8 57.1 53.7 50.5 47.6 S21m 11.395 11.087 10.729 10.279 9.807 9.315 8.842 8.385 7.951 7.554 7.180 6.833 6.521 6.232 6.002 5.788 5.605 5.418 5.249 5.096 4.967 4.850 4.729 4.606 4.498 4.377 4.261 4.135 4.007 3.876 3.784 3.679 3.588 3.509 3.448 3.415 3.397 3.376 3.339 3.312 3.279 3.229 3.166 3.091 3.021 2.945 2.877 2.804 2.738 2.666 2.604 S21a 161.5 153.2 145.1 137.3 130.0 123.1 116.7 110.6 104.9 99.5 94.5 89.6 85.1 80.9 76.7 72.7 68.5 64.2 60.3 56.3 52.3 48.1 43.7 39.5 35.3 31.0 26.8 22.5 18.4 14.8 11.2 7.5 4.1 0.9 -2.4 -5.6 -9.1 -13.2 -17.3 -21.4 -25.9 -30.4 -35.0 -39.4 -43.7 -47.8 -51.9 -56.0 -60.1 -64.2 -68.2 S12m 0.011 0.016 0.021 0.025 0.029 0.032 0.034 0.036 0.038 0.040 0.041 0.042 0.043 0.043 0.044 0.045 0.046 0.048 0.048 0.048 0.049 0.051 0.052 0.054 0.055 0.056 0.057 0.057 0.058 0.057 0.057 0.057 0.058 0.058 0.059 0.062 0.066 0.070 0.073 0.077 0.080 0.083 0.086 0.089 0.091 0.093 0.095 0.096 0.097 0.098 0.100 S12a 78.3 72.8 67.8 62.9 58.6 54.8 51.4 48.1 46.0 42.6 40.4 38.5 36.3 34.7 33.9 33.4 32.1 30.0 28.4 26.8 26.0 25.4 23.3 21.1 19.2 17.0 14.0 11.9 9.4 7.6 6.4 4.8 5.0 4.5 5.2 5.6 5.0 3.1 0.9 -1.5 -3.5 -6.7 -10.1 -12.3 -15.6 -18.5 -21.4 -24.2 -26.8 -29.7 -32.5 S22m 0.635 0.626 0.614 0.598 0.583 0.567 0.553 0.540 0.528 0.517 0.506 0.496 0.487 0.479 0.475 0.471 0.467 0.460 0.453 0.447 0.443 0.441 0.438 0.428 0.418 0.405 0.391 0.376 0.361 0.348 0.340 0.333 0.331 0.330 0.332 0.340 0.347 0.354 0.355 0.360 0.360 0.357 0.349 0.338 0.327 0.316 0.307 0.300 0.295 0.293 0.295 S22a -11.5 -17.0 -22.2 -26.9 -30.9 -34.6 -37.9 -40.8 -43.6 -46.2 -48.9 -51.2 -53.5 -55.5 -57.7 -59.5 -62.3 -64.6 -66.4 -68.2 -70.0 -72.6 -76.0 -78.8 -81.2 -84.3 -87.6 -90.7 -93.6 -96.1 -99.1 -101.7 -104.6 -107.2 -109.6 -112.7 -116.0 -120.7 -124.8 -129.3 -134.3 -139.9 -145.6 -151.3 -157.2 -163.3 -169.6 -176.1 177.6 171.3 165.3
7
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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FPD6836P70
Datasheet v3.0
S-PARAMETERS BIASED AT 5V, 55mA CONTINUED:
FREQ[GHz] 13.250 13.500 13.750 14.000 14.250 14.500 14.750 15.000 15.250 15.500 15.750 16.000 16.250 16.500 16.750 17.000 17.250 17.500 17.750 18.000 18.250 18.500 18.750 19.000 19.250 19.500 19.750 20.000 20.250 20.500 20.750 21.000 21.250 21.500 21.750 22.000 22.250 22.500 22.750 23.000 23.250 23.500 23.750 24.000 24.250 24.500 24.750 25.000 25.250 25.500 25.750 26.000 S11m 0.693 0.701 0.711 0.724 0.738 0.755 0.771 0.787 0.800 0.808 0.813 0.818 0.822 0.822 0.824 0.831 0.839 0.845 0.852 0.852 0.848 0.841 0.829 0.815 0.805 0.796 0.786 0.780 0.778 0.776 0.777 0.779 0.782 0.784 0.785 0.786 0.783 0.777 0.772 0.774 0.771 0.755 0.750 0.744 0.741 0.732 0.718 0.704 0.688 0.677 0.673 0.677 S11a 44.9 42.1 39.3 36.2 32.8 29.1 25.2 20.9 17.0 13.2 9.2 5.2 1.3 -2.4 -5.9 -9.6 -12.5 -15.3 -17.6 -19.5 -20.5 -20.9 -20.6 -20.5 -20.7 -21.6 -23.6 -26.8 -30.7 -35.6 -41.3 -46.8 -52.0 -56.4 -59.8 -62.1 -63.5 -65.4 -67.7 -70.1 -73.2 -76.1 -79.2 -81.7 -84.1 -86.5 -89.2 -90.9 -95.1 -99.6 -105.6 -111.1 S21m 2.545 2.488 2.434 2.392 2.347 2.307 2.262 2.225 2.184 2.144 2.110 2.067 2.024 1.973 1.915 1.855 1.788 1.721 1.663 1.603 1.553 1.508 1.473 1.440 1.415 1.398 1.389 1.382 1.375 1.369 1.356 1.333 1.309 1.279 1.241 1.195 1.162 1.124 1.098 1.073 1.054 1.043 1.028 1.025 1.027 1.031 1.047 1.061 1.074 1.080 1.086 1.065 S21a -72.1 -76.1 -79.9 -83.8 -87.7 -91.8 -95.7 -99.7 -103.8 -107.9 -112.2 -116.6 -121.1 -125.6 -130.0 -134.4 -138.4 -142.1 -145.7 -148.6 -151.4 -154.2 -156.6 -159.3 -161.9 -164.8 -167.6 -171.2 -175.1 -179.4 175.9 171.2 166.1 161.1 156.3 152.0 147.9 144.2 140.5 137.2 133.8 130.5 127.1 123.5 120.0 116.1 112.0 107.3 102.3 97.0 90.9 85.8 S12m 0.101 0.102 0.103 0.106 0.107 0.107 0.109 0.109 0.110 0.112 0.112 0.112 0.113 0.112 0.111 0.108 0.108 0.106 0.105 0.103 0.102 0.102 0.100 0.102 0.102 0.102 0.104 0.106 0.107 0.109 0.109 0.109 0.110 0.108 0.109 0.110 0.108 0.108 0.108 0.108 0.109 0.112 0.110 0.112 0.116 0.120 0.127 0.132 0.135 0.143 0.146 0.148 S12a -35.0 -37.8 -40.4 -43.3 -46.7 -48.9 -51.8 -55.1 -58.6 -61.9 -65.3 -68.4 -71.6 -75.7 -78.8 -83.5 -86.4 -88.7 -92.6 -94.2 -96.3 -98.6 -100.6 -103.0 -105.7 -107.4 -110.4 -113.5 -118.2 -121.5 -126.2 -130.7 -135.0 -140.3 -144.2 -148.4 -152.0 -155.3 -159.3 -162.4 -164.5 -169.1 -171.7 -175.2 -178.7 178.5 174.2 170.0 165.2 159.3 154.0 147.8 S22m 0.299 0.302 0.308 0.312 0.314 0.317 0.318 0.320 0.323 0.326 0.334 0.340 0.348 0.357 0.366 0.373 0.379 0.387 0.396 0.406 0.418 0.429 0.437 0.449 0.456 0.456 0.460 0.460 0.455 0.452 0.444 0.438 0.432 0.424 0.421 0.417 0.420 0.426 0.428 0.428 0.436 0.434 0.443 0.433 0.429 0.418 0.407 0.396 0.372 0.349 0.327 0.298 S22a 159.0 153.3 147.9 142.7 138.2 133.8 129.6 125.4 120.5 115.7 110.0 103.9 97.3 90.3 82.9 76.1 69.3 63.5 58.6 54.7 51.6 48.5 46.0 43.1 40.7 39.3 38.7 37.9 36.9 35.7 34.4 31.4 26.9 20.6 13.6 6.0 -1.5 -7.9 -12.7 -16.5 -19.5 -22.0 -25.3 -29.0 -33.5 -36.8 -41.2 -46.5 -50.7 -57.2 -64.2 -71.0
8
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD6836P70
Datasheet v3.0
PACKAGE OUTLINE:
(dimensions in millimeters - mm)
PREFERRED ASSEMBLY INSTRUCTIONS:
Available on request.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
HANDLING PRECAUTIONS: ORDERING INFORMATION:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114-B (Human Body Model) and Class 0 (0250V) per JESD22-A115-A (Machine Model). Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. PART NUMBER
FPD6836P70
DESCRIPTION
Packaged pHEMT
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
9
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com


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