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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD371 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *High Power Dissipation: PC= 50W(Max)@TC=25 *Complement to Type 2SB531 APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE 90 80 5 6 -6 50 UNIT V V .cn mi e V A IE Emitter Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W TJ 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS IC= 0.1A; IB= 0 IE= 10mA; IC= 0 IC= 4A; IB= 0.4A B 2SD371 MIN 80 5 TYP. MAX UNIT V V 2.5 1.5 0.1 0.1 240 V V mA mA IC= 4A; VCE= 5V VCB= 50V; IE= 0 Current-Gain--Bandwidth Product hFE-1 Classifications R 40-80 O 70-140 w w Y 120-240 w. .cn mi cse is VEB= 5V; IC= 0 IC= 1A; VCE= 5V 40 IC= 4A; VCE= 5V 20 IE= 0; VCB= 10V; f= 1MHz IC= 1A; VCE= 5V 100 8 pF MHz isc Websitewww.iscsemi.cn |
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