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| R SEMICONDUCTOR 0.5W SI O N PLA N A R ZEN ER D I D ES LIC O D O -35 FEA TU RES The zener vol are graded accordi to the i tage ng nternati E24 onal standard.O ther vol tage tol erance and hi zenervol gher tage on request 0.079(2.0) MAX DIA 1.083(27.5) MIN 0.150(3.8) MAX M EC H A N I A L D A TA C Case: D O -35 gl case ass Pol ty:C ol band denotes cathode end ari or W ei :Approx. 0.13 gram ght 0.020(0.52) MAX DIA 1.083(27.5) MIN D i ensi i i m ons n nches and (m ilm eters) li A BSO LU TE M A XIM U M RA TI G S(LIM I N G V A LU ES) (TA = 25 C ) N TI Zener current see tabl "C haracteri cs" e sti P ow er di pati atT A =50 C ssi on Juncti tem perature on S torage tem perature range P tot TJ TSTG 500 1) 175 -65 to+175 mW C C 1) Vald provi thata di i ded stance of 8m m from case are kept at am bi tem perature ent ELEC TRI A L C H A RA C TERISTI S (TA= 25 C ) C C Therm alresi stance j i to am bi ai uncton ent r Forw ard vol at IF =100m A tage R JA 300 1) 1.0 K /W V VF 1) Vald provi thata di i ded stance of 8m m from case are kept at am bi tem perature ent Zener Voltage range 1) VZNOM V BZX 55/C 0 V 8 BZX 55/C 2 V 0 BZX 55/C 2 V 4 BZX 55/C 2 V 7 BZX 55/C 3 V 0 BZX 55/C 3 V 3 BZX 55/C 3 V 6 BZX 55/C 3 V 9 BZX 55/C 4 V 3 BZX 55/C 4 V 7 BZX 55/C 5 V 1 BZX 55/C 5 V 6 BZX 55/C 6 V 2 BZX 55/C 6 V 8 BZX 55/C 7 V 5 BZX 55/C 8 V 2 BZX 55/C 9 V 1 BZX 55/C 10 BZX 55/C 11 BZX 55/C 12 BZX 55/C 13 BZX 55/C 15 BZX 55/C 16 BZX 55/C 18 BZX 55/C 20 BZX 55/C 22 BZX 55/C 24 BZX 55/C 27 3) IZT for VZT mA 2) IR and IR 2) at VR V mA <8 <50 A -<100 <50 <10 <85 <600 <2 <4 <40 1 A -<200 <100 <50 V -- TK VZ %/K -0.26...-0.23 -0.09...-0.06 0.8 2.0 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 5 0.73...0.83 1.9...2.1 2.28...2.56 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4.0...4.6 4.4...5.0 4.8...5.4 5.2...6.0 5.8...6.6 6.4...7.2 7.0...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 -0.08...-0.05 <75 <60 <35 <25 <10 <8 <7 <7 <10 <15 <20 <20 <26 <30 <40 <50 <55 <55 <80 <80 <220 <70 <70 <90 <110 <110 <170 <170 <50 <550 <450 <200 <150 1 <1 <0.5 <20 <10 -0.06...-0.03 -0.05...+0.02 -0.02...+0.02 -0.05...+0.05 2 3 5 6.2 6.8 0.03...0.06 0.03...0.07 0.03...0.07 0.03...0.08 0.03...0.09 0.03...0.1 <0.1 <2 7.5 8.2 9.1 10 11 12 13 15 16 18 20 0.03...0.11 0.04...0.12 Zener Voltage range 1) VZNOM V BZX 55/C 30 BZX 55/C 33 BZX 55/C 36 BZX 55/C 39 BZX 55/C 43 BZX 55/C 47 BZX 55/C 51 BZX 55/C 56 BZX 55/C 62 BZX 55/C 68 BZX 55/C 75 BZX 55/C 82 BZX 55/C 91 BZX 55/C 100 BZX 55/C 110 BZX 55/C 120 BZX 55/C 130 BZX 55/C 150 BZX 55/C 160 BZX 55/C 180 BZX 55/C 200 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 1 2.5 5 mA IZT for VZT 2) IR and IR 2) at VR V mA <80 <220 1 A A <2 V 22 24 27 <90 <90 <110 <125 <135 <150 <200 <250 <300 <450 <450 <600 <800 <950 <1250 <1400 <1700 <2000 <1500 <2000 <5000 <5000 <5500 <6000 <6500 <7000 <8500 <10000 0.1 0.25 <10 <1000 <0.1 <500 <500 <600 <700 <700 0.5 <5 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 TK V2 %/K 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79 77...87 85...96 94...106 104...116 114...127 124...141 138...156 153...171 168...191 188...212 0.04...0.12 0.05...0.12 1) Teated with pulses tp=20ms 2) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case 3) The BZX55-C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole. BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED) mA 50 C2V7 40 IZ 30 TJ=25 C 20 Test current IZ 10 5mA BZX55... C3V9 C3V3 C4V7 C5V6 C6V8 C0V8 C8V2 0 0 1 2 3 4 5 VZ 6 7 8 9 10 V BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED) mA 30 TJ=25 C C10 C12 C15 IZ 20 C18 C22 C27 10 Test current IZ 5mA BZX55... C33 0 0 10 20 VZ 30 40 V |
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