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MMBTSC1623
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 100 200 150 - 55 to + 150 Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group O Y G L Symbol hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) fT COB Min. 90 135 200 300 60 50 5 Typ. 250 3 Max. 180 270 400 600 0.1 0.1 0.3 1 Unit V V V A A V V MHz pF
Collector Base Breakdown Voltage at IC = 100 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 A Collector Cutoff Current at VCB = 60 V Emitter Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Base Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 04/09/2006
MMBTSC1623
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 04/09/2006

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