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| SEMiX101GD126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V Tj = 125 C VCES 1200 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1200 129 91 75 150 -20 ... 20 10 -40 ... 150 Tc = 25 C Tc = 80 C 117 81 75 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 150 600 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)13 Trench IGBT Modules SEMiX101GD126HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Tj = 150 C Typical Applications * AC inverter drives * UPS * Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 75 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 3 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 75 A Tj = 125 C RG on = 2 RG off = 2 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 5.3 0.28 0.24 600 10.00 225 40 10 470 85 11 0.27 Tj = 25 C Tj = 125 C 5 1.7 2.00 1 0.9 9.3 14.7 5.8 0.1 2.1 2.45 1.2 1.1 12.0 18.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W Remarks * Case temperatur limited to TC=125C max. * Not for new design Conditions min. typ. max. Unit GD (c) by SEMIKRON Rev. 15 - 02.12.2008 1 SEMiX101GD126HDs Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 75 A Tj = 125 C di/dtoff = 2240 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode per diode 20 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 0.7 1 0.04 5 5 350 0,493 5% 3550 2% 0.9 0.7 6.7 9.3 min. typ. 1.6 1.6 1 0.8 8.0 10.7 97 20 9 max. 1.8 1.8 1.1 0.9 9.3 12.0 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 75 A VGE = 0 V chiplevel VF0 rF IRRM SEMiX(R)13 Trench IGBT Modules SEMiX101GD126HDs Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.46 K/W K/W nH m m K/W Nm Nm Nm g Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K Remarks * Case temperatur limited to TC=125C max. * Not for new design GD 2 Rev. 15 - 02.12.2008 (c) by SEMIKRON SEMiX101GD126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 15 - 02.12.2008 3 SEMiX101GD126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 15 - 02.12.2008 (c) by SEMIKRON SEMiX101GD126HDs SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 15 - 02.12.2008 5 |
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