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| 30 -10V 25 -4.0V 20 -6.0V -5.0V -4.5V 25 Vds=-5V 20 -Id (A) 15 10 -3.5V -Id (A) 15 10 125C 25C Vgs=-3.0V 5 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 60 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 55 50 1.6 Vgs=-10V Id=-6A 1.4 Vgs=-4.5V Id=-5A Rds(on) (m:) 45 40 35 30 25 20 0 Vgs=-4.5V 1.2 Vgs=-10V 1 0.8 2 4 6 8 10 0 25 50 75 100 125 150 175 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 140 Id=-6A 120 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) 100 -Is (A) 80 60 40 20 2 4 25C 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 125C 6 8 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 Vds=-40V Id=-6A 1000 Ciss 800 8 Capacitance (pF) -Vgs (Volts) 6 600 4 400 Coss Crss 2 200 0 0 3 6 9 12 15 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Tj(max)=150C, Ta=25C Rds(on) limited 0 0 10 20 30 40 -Vds (Volts) Figure 8: Capacitance Characteristics 40 Tj(max)=150C Ta=25C 30 1ms 10ms -Id (Amps) Power (W) 10.0 100Ps 10Ps 20 1.0 1s 10s DC 0.1s 10 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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