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 MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
Outline Drawing
DESCRIPTION
MGFS39E2527A is a 4-stage amplifier designed for WiMAX CPE.
1 2 3 4 5 6 7 8 9 10
6.0
40 39 38 37 36 35 34 33 32 31
0.9
30 29 28 27 26 25 24 23 22 21
FEATURES
* * * * * * * * InGaP HBT Device 6V Operation 30dBm Linear Output Power (64QAM, EVM=2.5%) 40dB Linear Gain Integrated Output Power Detector Integrated 1-bit Step Attenuator Surface Mount Package RoHS Compliant Package
6.0
39E2527A (Lot. No) JAPAN
40 39 38 37 36 35 34 33 32 31 11 12 13 14 15 16 17 18 19 20
APPLICATION
IEEE802.16-2004
1 2 3 4 5 6 7 8 9 10
11 12 13 14 15 16 17 18 19 20
30 29 28 27 26 25 24 23 22 21
DIM in mm
FUNCTIONAL BLOCK DIAGRAM
Top view
Vc1 Vcont
Vc2
Vc3,Vcb3,4
Vc4
RF OUT RF IN
External Output Matching Circuits
Vdet Vcb1 Vcb2 Bias Circuit
Vref1,2
Vref3,4
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
ABSOLUTE MAXIMUM RATINGS
Symbol Vc1,Vc2, Vc3,Vc4, Vcb1,Vcb2 Vcb3,Vcb4 Vref Vcont Ic1 Ic2 Ic3 Ic4 Pin Tj Tc(op) Tstg NOTE : Each maximum rating is guaranteed independently. Please take care that MGFS39E2527A is operated under these conditions at the worst case on your terminal. Input Power Junction Temperature Operation Temperature Storage Temperature Pout<=30dBm Duty<=50% Operation current Parameter Collector Supply Voltage Conditions Value 8 Unit V
Reference Voltage ATT Control Voltage
-
3 3.3 80 300 300 2000 -3 160 -40 to +85 -40 to +125
V V mA mA mA mA dBm deg.C deg.C deg.C
ELECTRICAL CHARACTERISTICS (Ta=25C)
Symbol Parameter Test Conditions Min 2.500 Limits Typ 42 1250 2.5 10 1.5 19 Unit Max 2.700 GHz dB mA % dB V dB
f Frequency Gp Gain Vc=6V, Vref=2.85V Ict Total current Pout=30dBm EVM EVM 64QAM OFDM Modulation RLin Input Return Loss Duty Cycle <= 50% Vdet Power Detector Voltage ATT Control Gain Step NOTE : Zin=50 Ohm, Zout : Measured with application circuit
ESD RATING : Class 2 (HBM) MOISTURE SENSITIVITY LEVEL : LEVEL3 THERMAL RESISTANCE : 4.0 deg.C/W
(The thermal resistance of the 4th stage is calculated as 5.5 deg.C/W )
MITSUBISHI ELECTRIC CORP.
(2/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
PERFORMANCE DATA - Vc=6V Ta=25deg.C
Gain vs. Output Power
50.0 48.0 46.0 44.0 Gain (dB)
(WiMAX OFDM 64QAM signal input)
EVM vs. Output Power
6.0 5.0 4.0 EVM (%) 2.5GHz 2.6GHz 2.7GHz 2.5GHz 3.0 2.0 1.0 0.0 2.6GHz 2.7GHz
42.0 40.0 38.0 36.0 34.0 32.0 30.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
Collector Current vs. Output Power
1900 1700 1500 Ict (mA) 1300 1100 900 700 500 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 2.5GHz 2.5GHz 1.5 1.0 0.5 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Spectrum Emission Mask
Spectrum Emission@5.05MHz ofset (dBm) Spectrum Emission@11.5MHz ofset(dBm) 0 -5 -10 2.5GHz -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz 0 -5 -10 -15 -20 -25 -30 -35 -40 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.5GHz 2.6GHz 2.7GHz
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(3/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
Attenuator Performance
25 24 23 Attenuation ( dB ) 22 21 20 19 18 17 16 15 2.45 2.55 2.65 2.75 Frequency ( GHz )
Noise figure
12.00 Vcont=0V 10.00 8.00 NF (dB) 6.00 4.00 2.00 0.00 2.00 Vcont=3V
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(4/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
EVM vs. Output Power
6.0 5.0 4.0 EVM (%) 2.5GHz 2.6GHz 2.7GHz 2.5GHz 3.0 2.0 1.0 0.0 2.6GHz 2.7GHz
- Vc=6V Ta=85deg.C
Gain vs. Output Power
50.0 48.0 46.0 44.0 Gain (dB) 42.0 40.0 38.0 36.0 34.0 32.0 30.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
Collector Current vs. Output Power
1900 1700 1500 Ict (mA) 1300 1100 900 700 500 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 2.5GHz 2.5GHz 1.5 1.0 0.5 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Spectrum Emission Mask
Spectrum Emission@5.05MHz ofset (dBm) Spectrum Emission@11.5MHz ofset(dBm) 0 -5 -10 2.5GHz -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz 0 -5 -10 -15 -20 -25 -30 -35 -40 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.5GHz 2.6GHz 2.7GHz
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(5/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
Attenuator Performance
25 24 23 Attenuation ( dB ) 22 21 20 19 18 17 16 15 2.45 2.55 2.65 2.75 Frequency ( GHz )
Noise figure
12 10 8 NF (dB) 6 4 2 0 2.00
Vcont=0V Vcont=3V
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(6/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
EVM vs. Output Power
6.0 5.0 4.0 EVM (%) 2.5GHz 2.6GHz 2.7GHz 2.5GHz 3.0 2.0 1.0 0.0 2.6GHz 2.7GHz
- Vc=6V Ta=-40deg.C
Gain vs. Output Power
50.0 48.0 46.0 44.0 Gain (dB) 42.0 40.0 38.0 36.0 34.0 32.0 30.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
Collector Current vs. Output Power
1900 1700 1500 Ict (mA) 1300 1100 900 700 500 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 2.5GHz 2.5GHz 1.5 1.0 0.5 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Spectrum Emission Mask
Spectrum Emission@5.05MHz ofset (dBm) Spectrum Emission@11.5MHz ofset(dBm) 0 -5 -10 2.5GHz -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz 0 -5 -10 -15 -20 -25 -30 -35 -40 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.5GHz 2.6GHz 2.7GHz
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(7/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
Attenuator Performance
25 24 23 Attenuation ( dB ) 22 21 20 19 18 17 16 15 2.45 2.55 2.65 2.75 Frequency ( GHz )
Noise figure
12 Vcont=0V 10 8 NF (dB) 6 4 2 0 2.00 Vcont=3V
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(8/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
EVM vs. Output Power
6.0 5.0 4.0 EVM (%) 2.5GHz 2.6GHz 2.7GHz 2.5GHz 3.0 2.0 1.0 0.0 2.6GHz 2.7GHz
- Vc=5V Ta=25deg.C
Gain vs. Output Power
50.0 48.0 46.0 44.0 Gain (dB) 42.0 40.0 38.0 36.0 34.0 32.0 30.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
Collector Current vs. Output Power
1900 1700 1500 Ict (mA) 1300 1100 900 700 500 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 2.5GHz 2.5GHz 1.5 1.0 0.5 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Spectrum Emission Mask
Spectrum Emission@5.05MHz ofset (dBm) Spectrum Emission@11.5MHz ofset(dBm) 0 -5 -10 2.5GHz -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz 0 -5 -10 -15 -20 -25 -30 -35 -40 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.5GHz 2.6GHz 2.7GHz
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(9/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
Attenuator Performance
25 24 23 Attenuation ( dB ) 22 21 20 19 18 17 16 15 2.45 2.55 2.65 2.75 Frequency ( GHz )
Noise figure
12.00 Vcont=0V 10.00 8.00 NF (dB) 6.00 4.00 2.00 0.00 2.00 Vcont=3V
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(10/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
EVM vs. Output Power
6.0 5.0 4.0 EVM (%) 2.5GHz 2.6GHz 2.7GHz 2.5GHz 3.0 2.0 1.0 0.0 2.6GHz 2.7GHz
- Vc=5V Ta=85deg.C
Gain vs. Output Power
50.0 48.0 46.0 44.0 Gain (dB) 42.0 40.0 38.0 36.0 34.0 32.0 30.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
Collector Current vs. Output Power
1900 1700 1500 Ict (mA) 1300 1100 900 700 500 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 2.5GHz 2.5GHz 1.5 1.0 0.5 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Spectrum Emission Mask
Spectrum Emission@5.05MHz ofset (dBm) Spectrum Emission@11.5MHz ofset(dBm) 0 -5 -10 2.5GHz -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz 0 -5 -10 -15 -20 -25 -30 -35 -40 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.5GHz 2.6GHz 2.7GHz
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(11/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
Attenuator Performance
25 24 23 Attenuation ( dB ) 22 21 20 19 18 17 16 15 2.45 2.55 2.65 2.75 Frequency ( GHz )
Noise figure
12 10 8 NF (dB) 6 4 Vcont=0V 2 0 2.00 Vcont=3V
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(12/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
EVM vs. Output Power
6.0 5.0 4.0 EVM (%) 2.5GHz 2.6GHz 2.7GHz 2.5GHz 3.0 2.0 1.0 0.0 2.6GHz 2.7GHz
- Vc=5V Ta=-40deg.C
Gain vs. Output Power
50.0 48.0 46.0 44.0 Gain (dB) 42.0 40.0 38.0 36.0 34.0 32.0 30.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm)
Collector Current vs. Output Power
1900 1700 1500 Ict (mA) 1300 1100 900 700 500 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 2.5GHz 2.5GHz 1.5 1.0 0.5 0.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz
Spectrum Emission Mask
Spectrum Emission@5.05MHz ofset (dBm) Spectrum Emission@11.5MHz ofset(dBm) 0 -5 -10 2.5GHz -15 -20 -25 -30 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.6GHz 2.7GHz 0 -5 -10 -15 -20 -25 -30 -35 -40 20.0 22.0 24.0 26.0 28.0 30.0 32.0 Output Power(dBm) 2.5GHz 2.6GHz 2.7GHz
(a)5.05MHz offset
(b)11.5MHz offset
MITSUBISHI ELECTRIC CORP.
(13/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
Attenuator Performance
25 24 23 Attenuation ( dB ) 22 21 20 19 18 17 16 15 2.45 2.55 2.65 2.75 Frequency ( GHz )
Noise figure
12 Vcont=0V 10 8 NF (dB) 6 4 2 0 2.00 Vcont=3V
2.20
2.40
2.60
2.80
3.00
Frequncy (GHz)
MITSUBISHI ELECTRIC CORP.
(14/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
40
36
37
35
34
38
NC NC NC NC RF IN RF IN NC NC Vc1 NC
39
33
32
31
Vref1,2 NC NC Vcont NC NC Vref3,4 Vdet NC NC
1 2 3 4 5 6 7 8 9 10
15 14 16 13 17 18 12 19 11 20
PACKAGE PIN ASSIGN
30 29 28 27 26
GND RF OUT RF OUT RF OUT RF OUT RF OUT RF OUT RF OUT RF OUT GND
GND
25 24 23 22 21
NC NC NC Vcb1 Vcb2 Vc2 Vc3,Vcb3,4
Top View
Mitsubishi Electric Corp. reserves the right to make changes to the product and its related material at any time without notice. Pin 1,2,3,4,7,8,10, 11,12,13, 18,19,20, 31,32,35,36,38,39 21,30 5,6 9 14 15 16 17 22,23,24,25, 26,27,28,29 33 34 Function NC Description These pins are not wired inside. Both connecting to GND and open is acceptable. It is recommended to connect as shown in the example metal land plan. These pins are internally grounded inside the package and it is recommended to ground them. RF input terminals, internally DC-grounded. Do not apply DC voltage to them This is the collector of the 1st stage.(5-6V) This is the supply voltage for 1st stage base bias circuit. (5-6V) This is the supply voltage for 2nd stage base bias circuit. (5-6V) This is the collector of the 2nd stage. (5-6V) This is the collector of the 3rd stage and the supply voltage for 3rd and 4th stage base bias circuit. (5-6V) These are the RF output pins. These are the collector of the 4th stage. This is the output port of the detector sampled at the input of the 4th stage. This is the reference voltage and power up/down control pin for the 3rd and the 4th stage. The voltage can be applied together with pin 40. DC duty cycle is controlled with pin 34 and 40.(2.85V/0V) This is the control voltage for attenuator. (3V/0V) This is the reference voltage and power up/down control pin for the 1st and 2nd stage. The voltage can be applied together with pin 34. DC duty cycle is controlled with pin 34 and 40. (2.85V/0V)
GND RF IN Vc1 Vcb1 Vcb2 Vc2 Vc3 RF OUT Vdet Vref3,4
37 40
Vcon Vref1,2
MITSUBISHI ELECTRIC CORP.
(15/20)
NC NC NC
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
2.5-2.7GHz HBT Integrated Circuit EXAMPLE LAYOUT OF EVALUATION BOARD (40mmX 40mm, t=0.2mm(RF), Er=4.2,FR-4)
Specifications are subject to change without notice.
Vref(2.85V) Vcont(0/3V) Vdet
Vc(6V)
ITEM Q1 C1, C2, C3, C11, C12, C13, C14, C15, C18 C4 C5, C6 C7 C8 C9 C19, C22, C23, C24 C20, C21 R1 DESCRIPTION MGFS39E2527A 1 nF, 1005 10 nF, 1005 2.2 pF, 1005 3.4 pF, 1005 3.6 pF, 1005 0.8 pF, 1005 47 uF, 3216 1 uF, 1608 33K, 0603 NOTE 6mmX6mm, QFN Murata, GRM155B11H102K Murata, GRM155B11E103K Murata, GJM1553C1H2R2B Murata, GJM1553C1H3R4B Murata, GJM1553C1H3R6B Murata, GJM1554C1HR80B Murata, GRM32EB31C476K Murata, GRM188B31E105K Taiyosha, RPCO3T333J
MITSUBISHI ELECTRIC CORP.
(16/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
APPLICATION CIRCUIT IN EVALUATION BOARD
Vref1_2 Vcon Vref3_4 Vdet
C4 10n F C2 1nF C3 0 1nF R1 33kOhm 0 0
NC
NC
NC
NC
NC 34 33 32
1nF
40
39
38
37
36
35
NC NC NC NC
RFIN
1 2 3 4 5 6
31
NC
C1
30 29
2.2pF
27
C6 Z=8.5 E E=4.1deg F=2.7GHz Z=8.5 E E=1.6deg F=2.7GHz
2.2pF
C9 Z=50 E E=3.7deg F=2.7GHz Z=50 E E=5.1deg F=2.7GHz
3.4pF Z=41.3 E
0.8pF
28 26 25 24 23 22
202 11 12 13 14 15 16 17 18 19
C5
Z=50 E E=1.4deg F=2.7GHz
E=87.1deg F=2.7GHz
MGFS39E2527A
C8 3.6pF
Z=41.3 E E=2.3deg F=2.7GHz
Z=50 E E=42.7deg F=2.7GHz
RFOUT
NC NC
7 8 9
C7
C11 1nF
NC 10
1
NC
NC
NC
NC
C14 1nF
NC
C12 1nF
C13 1nF
C15 1nF
NC
C18 1nF C23 47u F
C19 47u F
C20 1uF
C21 1uF
C22 47u F
C24 47u F
Vc1
Vcb1
Vcb2
Vc2
Vc3
Vc4
NOTE: A properly designed PC board is essential to any RF/microwave circuit. Be sure to use controlled impedance lines on all high-frequency inputs and outputs. A ground plane should be present on both the top and bottom of the PC board and plated-through via holes connecting the top and bottom ground planes should be distributed (See page 6). GND pins and ground paddle of the package should be connected to the bottom ground plane with plated-through via holes close to the package. To improve the heat resistance, place as many plated-through via holes as possible under the ground paddle (See page. 9). The output matching circuit is not included in the device so that users can determine the optimum output performance on their boards at the frequencies of interest. Since the circuit dictates the RF characteristics of PA, especially distortion, it should be designed with great care to obtain its maximum ability. The schematic of the evaluation board is shown above. Capacitors, C5~C10 and C24, and controlled impedance lines are optimized to realize broad-band output matching at frequencies from 2.5 to 2.7GHz. Input and output matching networks are very sensitive to layout-related parasitic effects. Suggested component values may vary according to layout and PC board material. Since the high-impedance feed line for Vc4 is not included in the device, the line has to be laid out on the PCB. In layout design, please refer to the reference circuit of the feed line which affects the distortion. Each Vc node on the board should have its own decoupling capacitor to minimize supply coupling from one section of the MMIC to another. A bypass capacitor with low ESR at the RF frequency of operation is located close to the package to reject the RF noise. In addition, a large decoupling capacitor is located on each power supply line to reject low frequency noise.
MITSUBISHI ELECTRIC CORP.
(17/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
RECOMMENDED PULSE CONDITION
Vc 6V 0V 2.85V 0V Pulse Width 2.5ms Delay Time 0ms on RF Signal Input off Pulse Width 2.5ms Pulse Priod 5ms time Pulse Priod 5ms
Vref
*Pulse Period : 5ms *Pulse Width : 2.5 ms *Delay time : 0 ms *Rise time of Vref pulse : 100ns *Set up time of quiescent current
after Vref turn on : 1 us
* * *
This figure shows the timing chart between Vref and input signal. Only while the reference voltage is 2.85V, the device transmits the input signal (*1). We usually set the delay time at 0ms in our EVB evaluation because of short set-up time. However set-up time often depends on bypass capacitors of PCB. Therefore, please give appropriate delay time (e.g. about the rise time of Vref) between the rise edge of Vref and that of the input signal . * We recommended the device operate with less than 50% duty cycle of a 5msec period in order to ensure specified reliability. *1: In case the device is operated under the Vref conditions of more than 50% duty cycle, self-heating will cause reliability problem, thereby degrading both power gain and EVM performance unexpectedly.
TEST SET-UP
Power Meter Attenuator Vector Signal Generator Coupler Vcont Oscilloscope Vdet Vector Signal Analyzer Attenuator Attenuator Vref Pulse Power Supply Oscilloscope Coupler Power Meter
DUT
Vcc
DC Power Supply
* * *
Calibrate power meters at input/output ports on the EVB. Apply DC voltage to Vcc (Vcb1-3, Vcb4, Vc1~Vc4) and Vcont, where pulsed power supply should be applied to Vref for pulsed operation. . Monitor DC output voltage from Vdet using an oscilloscope or a multimeter.
GND->Vcc->Vref->Vcont (1)Apply 6V to Vcc, where stepping up from 0 to 6V is preferable. (2)Supply pulsed voltage between 0 and 2.85V for Vref. Please check the voltage level of Vref close to EVB and the timing chart between Vref and input signal using an oscilloscope. Also please do not apply supply voltage exceeding 3V(absolute maximum rating) to the Vref terminal. (3)Supply Vcont with 3V for the attenuation mode. In the thru-mode, apply 0V to Vcont or keep it open. Vcont->Vref->Vcc->GND The reverse procedure is recommended for bias off.
MITSUBISHI ELECTRIC CORP.
(18/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
PACKAGE DRAWING DIMENSIONS
All Dimensions are in mm. General tolerance is 0.1mm.
6.0 0.9(max.) 0.2 3-R0.3 5.0 C0.4 INDEX
P0.5 x 9 = 4.5
4.2 0.2 4.2 5.0
6.0
0.2 P0.5 x 9 = 4.5
Top View
Side View
Bottom View
EXAMPLE METAL LAND PATTERN
6600
W:290 p:210
WpWp WpW p 790 pW pWp
1695
1000 2695 2905 3695 3905
800 1000 200 800 210
4695
4905 3790 5195 5405 5695 5800 6600 210
1195
W:290 p:210
WpWp WpWpWpWp W 305
2100
Note: UNIT : um Through holes with 200um diameter should be put with a distance of 500um among them. It is recommended that they have metallization of 25um thick on the inside wall.
MITSUBISHI ELECTRIC CORP.
(19/20)
Rev. 1.0
Sep. 30-2009
MITSUBISHI SEMICONDUCTOR
MGFS39E2527A-01
Specifications are subject to change without notice.
2.5-2.7GHz HBT Integrated Circuit
HANDLING PRECAUTION
1) Work desk, test equipment, soldering iron and worker should be grounded before mounting and testing. Please note that electric discharge of GaAs HBT is much more sensitive than that of Si transistor. Handling without ground possibly damages GaAs HBT. The surface of a board on which this product is mounted should be as flat and clean as possible to prevent a substrate from cracking by bending this product.
2)
3)
Recommended IR reflow soldering condition is shown as follows. (Max. two times)
Peak 245deg.C
240deg.C 225deg.C (PKG Surface temp.)
10 sec 70 sec
Max. Ramp Up Rate 3deg./sec.
180 10 deg .C 120 20sec Max. Ramp Down Rate
4)
6deg./sec.
Handling precaution at high temperature In case of heating this product, please keep the same heat profile as recommended reflow one. Please note that crack, flaw or modification may be generated if epoxy resin part is handled with tweezers and etc. at high temperature.
5)
Cleaning condition Please select after confirming administrative guidance, legal restrictions, and the mass of the residual ion contaminant etc., and use it. After soldering, please remove the flux. Please take care that solvent does not penetrate into this product. GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste.
6)
7)
MITSUBISHI ELECTRIC CORP.
(20/20)
Rev. 1.0
Sep. 30-2009


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