 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SUU50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 63b 52b rDS(on) () 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB GDS Top View Order Number: SUU50N03-09P SUU50N03-09P--E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH 01 TC = 25_C TA = 25_C PD TJ, Tstg Conduction)a TC = 25_C TC = 100_C ID IDM IS IAS EAS Symbol VDS VGS Limit 30 20 63b 44.5b 50 10 35 61 65.2 7.5a --55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t 10 sec. b. Based on maximum allowable Junction Temperature, package limitation current is 50 A. Document Number: 72420 S-41696--Rev. B, 20-Sep-04 www.vishay.com t 10 sec Steady State Symbol RthJA RthJC Typical 16 40 1.8 Maximum 20 50 2.3 Unit _C/W C/ 1 SUU50N03-09P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 20 0.0115 50 0.0076 0.0095 0.015 0.014 S 30 1.0 3.0 100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 ID 50 A, VGEN = 10 V, Rg = 2.5 VDS = 15 V, VGS = 4.5 V, ID = 50 A 5, 5, VGS = 0 V, VDS = 25 V, f = 1 MHz 2200 410 180 1.5 15 7.5 5.0 9 80 22 8 15 120 35 12 ns 23 nC C p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 ms, duty cycle 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10 thru 6 V 5V 90 I D -- Drain Current (A) I D -- Drain Current (A) 90 120 Transfer Characteristics 60 4V 60 TC = 125_C 30 25_C 0 --55_C 30 3V 2V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS -- Drain-to-Source Voltage (V) www.vishay.com VGS -- Gate-to-Source Voltage (V) Document Number: 72420 S-41696--Rev. B, 20-Sep-04 2 SUU50N03-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 100 0.05 On-Resistance vs. Drain Current g fs -- Transconductance (S) 80 TC = --55_C 60 25_C 125_C 40 r DS(on)-- On-Resistance ( ) 0.04 0.03 0.02 VGS = 4.5 V 0.01 VGS = 10 V 20 0 0 10 20 30 40 50 0.00 0 20 40 60 80 100 ID -- Drain Current (A) ID -- Drain Current (A) Capacitance 3000 Ciss 2500 C -- Capacitance (pF) V GS -- Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 30 A 10 Gate Charge 2000 6 1500 4 1000 Coss 500 Crss 2 0 0 5 10 15 20 25 30 0 0 6 12 18 24 30 VDS -- Drain-to-Source Voltage (V) Qg -- Total Gate Charge (nC) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A 1.6 rDS(on) -- On-Resiistance (Normalized) I S -- Source Current (A) 100 Source-Drain Diode Forward Voltage 1.2 TJ = 150_C 10 TJ = 25_C 0.8 0.4 0.0 --50 1 --25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ -- Junction Temperature (_C) VSD -- Source-to-Drain Voltage (V) Document Number: 72420 S-41696--Rev. B, 20-Sep-04 www.vishay.com 3 SUU50N03-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 25 1000 Limited by rDS(on) 20 I D -- Drain Current (A) I D -- Drain Current (A) 100 10, 100 ms Safe Operating Area 15 10 1 ms 10 ms 10 1 100 ms 1s 10 s 5 0.1 TA = 25_C Single Pulse 100 s dc 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TA -- Ambient Temperature (_C) VDS -- Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72420 S-41696--Rev. B, 20-Sep-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of SUU50N03-09P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |