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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3968 DESCRIPTION *Low Collector Saturation Voltage *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) *High Switching Speed APPLICATIONS *Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 400 V 400 V 7 V 2 A 4 A 20 W 2 .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 1.0A ; IB1= 0.1A, L= 1mH IC= 50A; IE= 0 IC= 1mA; IB= 0 B 2SC3968 MIN 400 400 400 7 TYP. MAX UNIT V V V V IE= 50A; IC= 0 IC= 1A; IB= 0.2A B 1.0 1.5 10 10 50 10 30 V V A A IC= 1A; IB= 0.2A B VCB= 400V; IE= 0 Current-Gain--Bandwidth Product Output Capacitance Switching times ton tstg tf w w scs .i w VEB= 7V; IC= 0 IC= 0.1A ; VCE= 5V IE= -0.1A ; VCE= 10V .cn mi e 25 MHz pF IE= 0; VCB= 10V; f= 1.0MHz Turn-on Time Storage Time Fall Time IC= 0.8A ; IB1= -IB2= 0.08A; RL= 250;VCC 200V 1.0 2.5 1.0 s s s isc Websitewww.iscsemi.cn 2 |
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