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APT25GF120JCU2
ISOTOP(R) Boost chopper NPT IGBT SiC chopper diode
K
VCES = 1200V IC = 25A @ Tc = 90C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch
C
G
Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Low leakage current - RBSOA and SCSOA rated * Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
E
E G C
K
* * *
ISOTOP(R)
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 90C TC = 25C TC = 25C Tj = 125C Max ratings 1200 45 25 100 20 227 50A@1150V Unit V A V W
APT25GF120JCU2 - Rev 0 September, 2009
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APT25GF120JCU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6 400 Unit A V V nA
2.5 4
3.2 4.0
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 600V IC =25A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 25A RG = 22 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 25A RG = 22 VGE = 15V Tj = 125C VBus = 600V IC = 25A Tj = 125C RG = 22 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 1650 250 110 160 10 70 60 50 305 30 60 50 346 40 2.1 mJ 1.5 150 A Max Unit pF
nC
ns
ns
Chopper SiC diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions VR=1200V Tj = 25C Tj = 175C
Tc = 125C
Min 1200
Typ 32 56 10 1.6 2.3 40 96 69
Max 200 1000 1.8 3
Unit V A A V nC pF
APT25GF120JCU2 - Rev 0 September, 2009
Tj = 25C IF = 10A Tj = 175C IF = 10A, VR = 600V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
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APT25GF120JCU2
Thermal and package characteristics
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min IGBT SiC chopper Diode 2500 -55
Typ
Max 0.55 1.65 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
11.8 (.463) 12.2 (.480) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
29.2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Dimensions in Millimeters and (Inches)
Emitter
Gate
Typical IGBT Performance Curve
Fmax, Operating Frequency (kHz) Capacitance vs Collector to Emitter Voltage 10000
Cies
Operating Frequency vs Collector Current 120 100 80 60 40 20 0 0 10 20 30 IC, Collector Current (A) 40
Hard switching VCE = 600V D = 50% RG = 22 TJ = 125C TC= 75C
C, Capacitance (pF)
1000
Coes
ZVS ZCS
100
Cres
10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds)
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APT25GF120JCU2 - Rev 0 September, 2009
APT25GF120JCU2
60 Ic, Collector Current (A) 50 40
TJ=25C
Output characteristics (VGE=15V) Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
20 16 12 8 4 0
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle
TJ=25C
30
TJ=125C
20 10 0 0 1 2 3 4 5 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 7
TJ=125C
0
0.5
1
1.5
2
2.5
3
3.5
VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 25A TJ = 25C VCE=240V VCE=600V
Ic, Collector Current (A)
50 40 30 20 10 0 0
250s Pulse Test < 0.5% Duty cycle
VGE, Gate to Emitter Voltage (V)
60
18 16 14 12 10 8 6 4 2 0 0
VCE=960V
TJ=125C TJ=25C
2.5 5 7.5 10 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
12.5
30
60
90
120
150
180
Gate Charge (nC) DC Collector Current vs Case Temperature
Collector to Emitter Breakdown Voltage (Normalized)
1.10 Ic, DC Collector Current (A) 25 50 75 100 125
50 40 30 20 10 0
1.05
1.00
0.95
0.90 TJ, Junction Temperature (C)
25
50 75 100 125 TC, Case Temperature (C)
150
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APT25GF120JCU2 - Rev 0 September, 2009
APT25GF120JCU2
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 22
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
75 70 65 60 55 50 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 160
VCE = 600V RG = 22 VGE = 15V
400
VGE=15V, TJ=125C
350
300
VGE=15V, TJ=25C
250
VCE = 600V RG = 22
200 5 15 25 35 45 55
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 45
TJ = 125C
tr, Rise Time (ns)
tf, Fall Time (ns)
120
40 35 30 25
TJ = 25C
80
VGE=15V
40
VCE = 600V, VGE = 15V, RG = 22
0 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current
VCE = 600V RG = 22
20 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55
Turn-Off Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 4
VCE = 600V VGE = 15V RG = 22 TJ = 125C
Eon, Turn-On Energy Loss (mJ)
6 5 4 3 2 1 0 5
TJ=125C, VGE=15V
3
TJ=25C, VGE=15V
2
TJ = 25C
1
0
15 25 35 45 ICE, Collector to Emitter Current (A)
55
5
15 25 35 45 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area
55
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 3 IC, Collector Current (A)
VCE = 600V VGE = 15V TJ= 125C
60 50 40 30 20 10 0
2.5
Eon, 25A
2
Eoff, 25A
1.5
1 0 10 20 30 40 50 60 Gate Resistance (Ohms)
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
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APT25GF120JCU2 - Rev 0 September, 2009
APT25GF120JCU2
Typical SiC chopper diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9
0 0.00001
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics 100 IR Reverse Current (A)
20
IF Forward Current (A)
16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
TJ=75C
75
50
TJ=125C
TJ=75C TJ=125C TJ=175C TJ=25C
25
TJ=175C
0 400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
700 C, Capacitance (pF) 600 500 400 300 200 100 0 1 10 100 VR Reverse Voltage 1000
APT25GF120JCU2 - Rev 0 September, 2009
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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