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A Product Line of Diodes Incorporated
DMC3028LSD
30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET
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Product Summary
Device V(BR)DSS RDS(on) 28m @ VGS= 10V Q1 30V 45m @ VGS= 4.5V 25m @ VGS= -10V Q2 -30V 41m @ VGS= -4.5V -5.7A 5.6A -7.4A ID TA = 25C 7.1A
Features and Benefits
* * *
Low on-resistance Fast switching speed "Green" Component and RoHS Compliant (Note 1)
Mechanical Data
* * * Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate)
Description and Applications
This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.
* * * *
* * *
Motor control Backlighting DC-DC Converters Power management functions
S1 G1 S2 G2
TOP VIEW
D1 D1 D2 D2 Top view
D1
D2
G1 S1
Q1 N-Channel
G2 S2
Q2 P-Channel
Ordering Information
Product DMC3028LSD-13
Note:
(Note 1) Marking C3028LD Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
1. Diodes, Inc. defines "Green" products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.'s "Green" Policy can be found on our website. For packaging details, go to our website
Marking Information
= Manufacturer's Marking C3028LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52)
C3028LD YY WW
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Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS (Notes 3 & 5) TA = 70C (Notes 3 & 5) (Notes 2 & 5) (Notes 2 & 6) (Notes 4 & 5) (Notes 3 & 5) (Notes 4 & 5) N-Channel - Q1 30 20 7.1 ID 5.7 5.5 6.6 34 3.5 34 P-Channel - Q2 -30 20 -7.4 -5.9 -5.8 -6.8 -36 -3.5 -36 A Units V V
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
IDM IS ISM
A A A
Continuous Source Current (Body diode) Pulsed Source Current (Body diode)
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Power Dissipation Linear Derating Factor Power Dissipation Linear Derating Factor Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range
Notes:
Symbol (Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5) (Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5) (Notes 5 & 7) PD PD PD RJA RJL TJ, TSTG
N-Channel - Q1 1.3 10 1.8 14 2.1 17 100 70 60 51
P-Channel - Q2
Unit W mW/C W mW/C W mW/C C/W
46 -55 to +150
C/W C
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead).
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RDS(ON)
RDS(ON)
1
DC 1s 100ms 10ms Notes 2 & 5 Single Pulse, T amb=25C 1ms 100us
-ID Drain Current (A)
ID Drain Current (A)
10 Limited
10 Limited
1
DC 1s 100ms Notes 2 & 5 Single Pulse, T amb=25C 10ms 1ms 100us
100m
100m
10m 0.1
10m 0.1
1
10
1
10
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
100 80 60 40
D=0.2 D=0.5
P-channel Safe Operating Area
2.0
Max Power Dissipation (W)
Thermal Resistance (C/W)
1.5
Two active die One active die
1.0
Single Pulse D=0.05 D=0.1
0.5
20 0 100
0.0 0 25 50 75 100 125 150
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Temperature (C)
Transient Thermal Impedance
Single Pulse T amb=25C
Derating Curve
Maximum Power (W)
100
10
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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Electrical Characteristics - Q1 N-Channel
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse recovery time (Note 9) Reverse recovery charge (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)
Notes:
@TA = 25C unless otherwise specified Min 30 1.0 Typ 12 0.68 11.5 4.4 472 178 65 5.2 10.5 1.86 2.3 2.5 3.1 14 9.7 Max 0.5 100 3.0 0.028 0.045 1.2 Unit V A nA V S V ns nC pF pF pF nC nC nC nC ns ns ns ns VDD= 15V, VGS= 10V ID= 1A, RG 6.0 VDS= 15V, VGS= 10V ID= 6A VDS= 15V, VGS= 4.5V ID= 6A VDS= 15V, VGS= 0V f= 1MHz Test Condition ID = 250A, VGS= 0V VDS= 30V, VGS= 0V VGS= 20V, VDS= 0V ID= 250A, VDS= VGS VGS= 10V, ID= 6.0A VGS= 4.5V, ID= 4.9A VDS= 15V, ID= 6.0A IS= 1.7A, VGS= 0V IS= 1.7A, di/dt= 100A/s
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf
8. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures.
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Q1 N-Channel
10V
5V 4.5V
T = 150C
10V
4.5V
ID Drain Current (A)
ID Drain Current (A)
10
4V 3.5V
4V 3.5V 3V
10
1
3V
1
2.5V
0.1
T = 25C
2.5V VGS
0.1
2V VGS
0.01 0.1
0.01
VDS Drain-Source Voltage (V)
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
Output Characteristics
Normalised RDS(on) and VGS(th)
10
VDS = 10V
VGS = 10V
ID Drain Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
ID = 6A
RDS(on)
T = 150C
1
T = 25C
VGS(th) VGS = VDS ID = 250uA
0.1 2
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance (W) 1000
T = 25C 3V
VGS Gate-Source Voltage (V)
3
4
Tj Junction Temperature (C)
50
100
150
Normalised Curves v Temperature
10
VGS
100 10 1 0.1 0.01 0.01
4.5V 10V
ISD Reverse Drain Current (A)
2.5V
1
T = 150C
3.5V 4V
0.1
T = 25C
0.01
Vgs = -3V
0.1
On-Resistance v Drain Current
ID Drain Current (A)
1
10
1E-3 0.2
0.4
0.6
0.8
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
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DMC3028LSD Q1 N-Channel continued
700
VGS Gate-Source Voltage (V)
C Capacitance (pF)
600 500 400 300 200 100 0
CRSS COSS
VGS = 0V f = 1MHz
CISS
1
10
10 9 8 7 6 5 4 3 2 1 0
ID = 6A
VDS = 15V
0
1
2
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC)
3
4
5
6
7
8
9
10 11
Gate-Source Voltage v Gate Charge
Test Circuits - Q1 N-Channel
QG 12V
Current regulator
50k Same as D.U.T
VG
Q GS
Q GD V DS IG D.U.T ID V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS 90% V GS RG 10% V GS td(on) t(on) tr td(off) t(on) tr RD V DS VDD
Switching time waveforms
DMC3028LSD
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Electrical Characteristics - Q2 P-Channel
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) Forward Transconductance (Notes 8 & 9) Diode Forward Voltage (Note 8) Reverse recovery time (Note 9) Reverse recovery charge (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)
Notes:
@TA = 25C unless otherwise specified Min -30 -1.0 Typ 18.6 -0.80 16.2 10 1678 303 178 16.4 31.6 4.3 6.2 3.5 4.9 44 28 Max -0.5 100 -3.0 0.025 0.041 -1.2 Unit V A nA V S V ns nC pF pF pF nC nC nC nC ns ns ns ns VDD= -15V, VGS= -10V ID= -1A, RG 6.0 VDS= -15V, VGS= -10V ID= -7.1A VDS= -15V, VGS= -4.5V ID= -7.1A VDS= -15V, VGS= 0V f= 1MHz Test Condition ID = -250A, VGS= 0V VDS= -30V, VGS= 0V VGS= 20V, VDS= 0V ID= -250A, VDS= VGS VGS= -10V, ID= -7.1A VGS= -4.5V, ID= -5.5A VDS= -15V, ID= -7.1A IS= -1.7A, VGS= 0V IS= -2.2A, di/dt= 100A/s
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf
8. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures.
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Q2 P-Channel
10V
4.5V
3.5V
T = 150C
10V
3.5V 3V 2.5V
-ID Drain Current (A)
-ID Drain Current (A)
10
3V
10
2.5V
1
2V
1
0.1
VGS
T = 25C
VGS
0.1 0.1
0.01
-VDS Drain-Source Voltage (V)
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
Output Characteristics
VGS = 10V
Normalised RDS(on) and VGS(th)
10
VDS = 10V
-ID Drain Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
ID = 7.1A RDS(on)
T = 150C
1
T = 25C
VGS = VDS ID = 250uA
VGS(th)
0.1
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
-VGS Gate-Source Voltage (V)
2
3
Tj Junction Temperature (C)
50
100
150
Normalised Curves v Temperature
10
T = 150C
10
2.5V
T = 25C
VGS
-ISD Reverse Drain Current (A)
1
1
3V 3.5V
0.1
T = 25C
0.1
4V 10V
0.01
Vgs = 0V
0.01 0.1
On-Resistance v Drain Current
-ID Drain Current (A)
1
10
1E-3 0.2
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
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DMC3028LSD Q2 P-Channel continued
2500
VGS = 0V
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
2000 1500 1000 500 0
CISS COSS
f = 1MHz
CRSS
1
10
10 9 8 7 6 5 4 3 2 1 0
ID = 7.1A
VDS = 15V
0
5
-VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC)
10
15
20
25
30
35
Gate-Source Voltage v Gate Charge
Test Circuits - Q2 P-Channel
QG 12V 0.2 F
Current regulator
50k Same as D.U.T
VG
QGS
QGD VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90% VGS RG 10% VGS tr t(on) td(off) tr t(on) td(on) Pulse width 1 S Duty factor 0.1% RD VDS VDD
Switching time waveforms
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Package Outline Dimensions
DIM
Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050
Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27
h x 45
DIM
Inches Min. Max.
Millimeters Min. Max. 0.51 0.25 8 0.50 -
A A1 D H E L
0.053 0.004 0.189 0.228 0.150 0.016
e b c h -
0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 -
1.27 BSC 0.33 0.19 0 0.25 -
Suggested Pad Layout
1.52 0.060 7.0 0.275 4.0 0.155
0.6 0.024
1.27 0.050
mm inches
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IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
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