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PD - 96208
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant
IRLR8256PbF IRLU8256PBF
HEXFET(R) Power MOSFET
VDSS
25V
RDS(on) max
5.7m:
D
Qg
10nC
S G
S D G
D-Pak I-Pak IRLR8256PbF IRLU8256PBF
G Gate D Drain S Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
25 20 81f 57f 325 63 31 0.42 -55 to + 175 300 (1.6mm from case)
Units
V
A
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
W W/C C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case
h
Typ.
Max.
2.4 50 110
Units
C/W
Junction-to-Ambient (PCB Mount) Junction-to-Ambient
gA
--- --- ---
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 11
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1
12/19/08
IRLR/U8256PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy
Min. Typ. Max. Units
25 --- --- --- 1.35 --- --- --- --- --- 81 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 18 4.2 6.7 1.8 -7.2 --- --- --- --- --- 10 2.3 1.6 3.6 2.6 5.1 9.0 2.5 9.7 46 12 8.5 1470 453 185 --- --- 5.7 8.5
Conditions
V VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A
2.35 V VDS = VGS, ID = 25A --- mV/C 1.0 150 100 -100 --- 15 --- --- --- --- --- --- 3.9 --- --- --- --- --- --- --- Typ. --- --- --- pF nC A nA S
e e
VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 20A VDS = 13V VGS = 4.5V ID = 20A See Fig. 16 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5Ve
nC
ns
ID = 20A
RG = 1.8 See Fig. 14
VGS = 0V VDS = 13V = 1.0MHz Max. 86 20 6.3 Units mJ A mJ
Avalanche Characteristics
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 19 17 81f A 325 1.0 29 26 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 20A, VGS = 0V TJ = 25C, IF = 20A, VDD = 13V di/dt = 300A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR/U8256PbF
1000
TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V
1000
TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10 2.5V
1 2.5V
0.1 0.1
60s PULSE WIDTH = 25C Tj
1 10 100
60s PULSE WIDTH
1 0.1 1 Tj = 175C 10 100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
100 T J = 175C 10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 25A VGS = 10V
1.5
1.0
1
T J = 25C VDS = 15V 60s PULSE WIDTH
0.1 1 2 3 4 5 6 7 8
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRLR/U8256PbF
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
5.0 ID= 20A
VGS, Gate-to-Source Voltage (V)
4.0
VDS= 20V VDS= 13V
C, Capacitance (pF)
Ciss 1000 Coss
3.0
2.0
Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100
1.0
0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 100 1msec 10msec 10 Tc = 25C Tj = 175C Single Pulse 1 0 1 10 100 VDS, Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A)
100 TJ = 175C 10 T J = 25C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR/U8256PbF
90
VGS(th), Gate threshold Voltage (V)
2.5 Limited By Package
80 70
ID, Drain Current (A)
2.0
60 50 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5 ID = 25A 1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) C/W
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
0.1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.04252
i (sec)
0.000007 0.000109 0.001003
0.57953 1.17480 0.60472
1
2
3
4
0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
0.005976 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8256PbF
15V
400
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
350 300 250 200 150 100 50 0 25 50 75 100
ID TOP 5.57A 8.50A BOTTOM 20A
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
125
150
175
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy vs. Drain Current
I AS
RD
Fig 12b. Unclamped Inductive Waveforms
V GS RG
Current Regulator Same Type as D.U.T.
V DS
D.U.T.
+
-V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
50K 12V .2F .3F
Fig 14a. Switching Time Test Circuit
D.U.T. + V - DS
VDS 90%
VGS
3mA
IG
ID
Current Sampling Resistors
10% VGS
td(on) tr t d(off) tf
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
6
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IRLR/U8256PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
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IRLR/U8256PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
@Y6HQG@) UCDTADTA6IADSAS XDUCA6TT@H7G GPUA8P9@A !"# %A! ! Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9APIAXXA
DIAUC@A6TT@H7GAGDI@AA6A
,5)5 $
96U@A8P9@ @6SA X@@FA GDI@A6 A2A! %
Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA
6TT@H7G GPUA8P9@
AQAAvAhriyAyvrAvvAvqvphr AGrhqArrAAhyvsvphvAAurApryrry
25
Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UARV6GDAD@9AUPAUC@ 8PITVH@SAG@W@GAPQUDPI6G @6SA X@@FA A2A! %
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6A2A6TT@H7GATDU@A8P9@
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRLR/U8256PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
@Y6HQG@) UCDTADTA6IADSAV ! XDUCA6TT@H7G GPUA8P9@A$%&' 6TT@H7G@9APIAXXA (A! DIAUC@A6TT@H7GAGDI@AA6A Ir)AAQAAvAhriyAyvrAvv vqvphrAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
,5)8 $
96U@A8P9@ @6SA A2A! X@@FA ( GDI@A6
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRLR/U8256PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRLR/U8256PbF
Orderable part number IRLR8256PBF IRLR8256TRPBF IRLR8256PBF
Qualification Information Qualification level Industrial

Package Type D-PAK D-PAK I-PAK
Standard Pack Form Quantity Tube/Bulk 75 Tape and Reel 2000 Tube/Bulk 75
Note
(per JEDEC JESD47F
guidelines)
Comments: This family of products has passed JEDEC's Industrial qualification. IR's Consumer qualification level is granted by extension of the higher Industrial level.
Moisture Sensitivity Level D-PAK I-PAK RoHS Compliant Yes MSL1 (per JEDEC J-STD-020D) Not applicable
Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.43mH, RG = 25, IAS = 20A. Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
R is measured at TJ approximately 90C.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-790 Visit us at www.irf.com for sales contact information.12/2008
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