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PD - 97360
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant
IRLR8259PbF IRLU8259PBF
HEXFET(R) Power MOSFET
VDSS
25V
RDS(on) max
8.7m
D
Qg
6.8nC
S G
S D G
D-Pak I-Pak IRLR8259PbF IRLU8259PBF
G Gate D Drain S Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
Max.
25 20 57f 40f 230 48 24 0.32 -55 to + 175 300 (1.6mm from case)
Units
V
g Maximum Power Dissipation g
Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Continuous Drain Current, VGS @ 10V Pulsed Drain Current
A W W/C C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
3.15 50 110
Units
C/W
gA
--- --- ---
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 11
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1
12/16/08
IRLR/U8259PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy
Min. Typ. Max. Units
25 --- --- --- 1.35 --- --- --- --- --- 55 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 18 6.3 10.6 1.90 -7.1 --- --- --- --- --- 6.8 1.5 1.1 2.4 1.8 3.5 5.9 2.2 8.4 38 9.1 8.9 900 300 110 --- --- 8.7 12.9 2.35 --- 1.0 150 100 -100 --- 10 --- --- --- --- --- --- 3.6 --- --- --- --- --- --- --- Typ. --- --- --- pF nC nC VDS = 13V VGS = 4.5V ID = 17A V
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 21A VGS = 4.5V, ID = 17A
mV/C Reference to 25C, ID = 1mA m V mV/C A nA S VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 17A
VDS = VGS, ID = 25A
e e
See Fig. 16 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5Ve ns ID = 17A RG = 1.8 See Fig. 14 VGS = 0V VDS = 13V = 1.0MHz Max. 67 17 4.8 Units mJ A mJ
Avalanche Characteristics
--- --- --- --- --- --- --- --- 17 15
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
56f A 230 1.0 26 23 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 17A, VGS = 0V TJ = 25C, IF = 17A, VDD = 13V di/dt = 200A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR/U8259PbF
1000
TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V
1000
TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.5V
60s PULSE WIDTH
Tj = 25C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
2.5V 1 0.1 1
60s PULSE WIDTH
Tj = 175C 10 100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 21A VGS = 10V
100 T J = 175C 10
1.5
1.0
1
T J = 25C VDS = 15V 60s PULSE WIDTH 1 2 3 4 5 6 7 8
0.1
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRLR/U8259PbF
10000
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd
5.0 ID= 17A
VGS, Gate-to-Source Voltage (V)
4.0
VDS= 20V VDS= 13V
C, Capacitance (pF)
3.0
1000
Ciss Coss
2.0
1.0
Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0.0 0 1 2 3 4 5 6 7 8 QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 100 1msec
100
10
T J = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1
T J = 25C VGS = 0V
10 Tc = 25C Tj = 175C Single Pulse 1 0
10msec
0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR/U8259PbF
60 Limited By Package 50
ID, Drain Current (A)
2.5
VGS(th) , Gate threshold Voltage (V)
2.0
40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5 ID = 25A 1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) C/W
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 4
Ri (C/W)
C
0.08148 0.88089 1.48814 0.69949
0.000017 0.000107 0.001018 0.006290
i (sec)
1
2
3
4
0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1
0.001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8259PbF
15V
300
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
250 200 150 100 50 0 25 50 75 100
ID 4.2A 6.4A BOTTOM 17A TOP
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
125
150
175
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy vs. Drain Current
I AS
RD
Fig 12b. Unclamped Inductive Waveforms
VGS RG
Current Regulator Same Type as D.U.T.
V DS
D.U.T.
+
-V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
50K 12V .2F .3F
Fig 14a. Switching Time Test Circuit
D.U.T. + V - DS
VDS 90%
VGS
3mA
IG
ID
Current Sampling Resistors
10% VGS
td(on) tr t d(off) tf
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
6
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IRLR/U8259PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
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IRLR/U8259PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
@Y6HQG@) UCDTADTA6IADSAS XDUCA6TT@H7G GPUA8P9@A !"# %A! ! Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9APIAXXA
DIAUC@A6TT@H7GAGDI@AA6A
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96U@A8P9@ @6SA X@@FA GDI@A6 A2A! %
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6TT@H7G GPUA8P9@
AQAAvAhriyAyvrAvvAvqvphr AGrhqArrAAhyvsvphvAAurApryrry
25
Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UARV6GDAD@9AUPAUC@ 8PITVH@SAG@W@GAPQUDPI6G @6SA X@@FA A2A! %
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRLR/U8259PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
@Y6HQG@) UCDTADTA6IADSAV ! XDUCA6TT@H7G GPUA8P9@A$%&' 6TT@H7G@9APIAXXA (A! DIAUC@A6TT@H7GAGDI@AA6A Ir)AAQAAvAhriyAyvrAvv vqvphrAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
,5)8 $
96U@A8P9@ @6SA A2A! X@@FA ( GDI@A6
25
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRLR/U8259PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRLR/U8259PbF
Orderable part number IRLR8259PBF IRLR8259TRPBF IRLU8259PBF
Qualification information Qualification level
Package Type D-PAK D-PAK I-PAK
Standard Pack Note Form Quantity Tube/Bulk 75 Tape and 2000 Reel Tube/Bulk 75
Industrial (per JEDEC JESD47F guidelines) Comments: This family of products has passed JEDEC's Industrial qualification. IR's Consumer qualification level is granted by extension of the higher Industrial level. Moisture Sensitivity Level D-PAK MS L1 (per JE DE C J-S T D-020D) I-PAK Not applicable RoHS compliant Yes
Qualification standards can be found at International Rectifiers web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.48mH, RG = 25, IAS = 17A. Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-790 Visit us at www.irf.com for sales contact information.12/08
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