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| SEMiX202GB066HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE 15 V Tj = 150 C VCES 600 V VGES tpsc Tj = 175 C Tc = 25 C Tc = 80 C 600 274 207 200 400 -20 ... 20 6 -40 ... 175 Tc = 25 C Tc = 80 C 291 214 200 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 400 1000 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)2s Trench IGBT Modules SEMiX202GB066HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Tj = 175 C Typical Applications * Matrix Converter * Resonant Inverter * Current Source Inverter Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 12.3 0.77 0.37 1600 1.00 65 80 6 545 95 8 0.21 1.45 1.70 0.9 0.85 2.8 4.3 5.8 0.15 1.9 2.1 1 0.9 4.5 6.0 6.5 0.45 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance Conditions min. typ. max. Unit VGE=VCE, IC = 3.2 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 300 V IC = 200 A Tj = 150 C RG on = 4.2 RG off = 4.2 GB (c) by SEMIKRON Rev. 18 - 02.12.2008 1 SEMiX202GB066HDs Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IRRM Qrr Err Rth(j-c) SEMiX202GB066HDs min. typ. 1.4 1.4 max. 1.6 1.6 1.1 0.95 2.5 3.3 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 rF 0.9 0.75 1.5 2.3 1 0.85 2.0 2.8 205 28 6.5 SEMiX(R)2s Trench IGBT Modules IF = 200 A Tj = 150 C di/dtoff = 3900 A/s T = 150 C j VGE = -8 V Tj = 150 C VCC = 300 V per diode per diode 0.27 K/W K/W Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 18 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 0.7 1 0.045 5 5 250 0,493 5% 3550 2% nH m m K/W Nm Nm Nm g Typical Applications * Matrix Converter * Resonant Inverter * Current Source Inverter Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance GB 2 Rev. 18 - 02.12.2008 (c) by SEMIKRON SEMiX202GB066HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 18 - 02.12.2008 3 SEMiX202GB066HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 18 - 02.12.2008 (c) by SEMIKRON SEMiX202GB066HDs SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 18 - 02.12.2008 5 |
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