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| 2SC2411K NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 32 40 5.0 500 200 +150 -55 to +150 Unit V V V mA mW C C WEITRON http://www.weitron.com.tw 1/5 22-May-08 2SC2411K ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage IC = 1mA, I B = 0 Collector-Base Breakdown Voltage IC = 100A, I E = 0 Emitter-Base Breakdown Voltage IE= 100A, IC=0 VCB = 20V, I E = 0 VEB = 4V, I C = 0 Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 32 40 5.0 - Typ - Max 1.0 1.0 Unit V V V A A ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = 500mA, I B = 50mA DC Current Transfer Ration VCE = 3V VCE(sat) 0.4 V hFE 82 - 390 SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE = 5V, IE = -20mA, f = 100Mhz Output Capacitance VCB = 10V, I E =0mA, f=1Mhz fT C ob 250 6.0 MHz pF CLASSIFICATION hFE Rank Range Marking P 82-180 CP Q 120-270 CQ R 180-390 CR S 270-560 CRS WEITRON http://www.weitron.com.tw 2/5 22-May-08 2SC2411K Electrical characteristic curves(TA = 25C) 1000 500 COLLECTOR CURRENT : I (mA) VCE=6V COLLECTOR CURRENT : I (mA) 100 Ta = 25OC 0.50m A 0.45m A 200 100 50 20 10 5 2 1 0.5 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.40mA Ta=100OC 80OC 25OC 25OC 55 OC 0.35mA C C 0.30mA 50 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA 0 0 1 2 3 I B = 0A 4 5 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics(I) Ta = 25OC 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 500 1 Ta = 25OC lC /l B = 10 COLLECTOR CURRENT : I (mA) 400 0.5 C 300 0.2 200 0.6mA 0.4mA 0.2mA 0.1 100 0.05 0 0 1 2 3 4 IB= 0A 5 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.3 Grounded emitter output characteristics(II) Fig.4 Collector-emitter saturation voltage vs. collector current WEITRON http://www.weitron.com.tw 3/5 22-May-08 2SC2411K 1000 500 VCE = 3V TRANSITION FREQUENCY : f (MHz) 500 Ta = 25 C V CE = 5V O DC CURRENT GAIN : h FE 200 100 50 C Ta = 100O 75 C O 50 C O 25 C O T 200 O 0C O 25 C O 0C 5 100 20 10 0.1 50 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 0.5 1 2 5 10 E 20 50 COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : I (mA) Fig.5 DC current gain vs. collector current Fig.6 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob(pF) : Cib(pF) 50 Cib 20 Ta = 25 C f = 1MHz IE =0A IC = 0A O EMITTER INPUT CAPACITANCE 10 Cob 5 2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCE(V) EMITTER TO BASE VOLTAGE: VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage WEITRON http://www.weitron.com.tw 4/5 22-May-08 2SC2411K SOT-23 Outline Dimension A SOT-23 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 TOP VIEW D E G H B C K J L M WEITRON http://www.weitron.com.tw 5/5 22-May-08 |
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