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| 2SD1664 Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 A NPN Silicon General Purpose Transistor Features SOT-89 E1 b1 1 L Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM :1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O 2 3 o e e1 b C 1.BASE 2.COLLECTOR 3.EMITTER Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 0.114 0.035 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP 0.122 0.043 Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 Electrical Characteristics( Tamb=25OC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE (sat) Test Conditions Ic= 50 A IE=0 MIN 40 32 5 0.5 0.5 82 390 0.4 150 V MHz TYP MAX UNIT V V V A A Ic= 1mA IB =0 IE= 50 A IC=0 VCB= 20 V, IE=0 VEB= 4V, IC=0 VCE= 3V, IC = 0.1A I C= 500mA, IB= 50mA VCE= 5V , IC= 50mA fT Cob f=1MHz VCB= 10V, IE= 0 E Output Capacitance f=1MHz 15 pF Classification of hFE Rank Range Marking P 82-180 DAP Q 120-270 DAQ R 180-390 DAR http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SD1664 Elektronische Bauelemente NPN Silicon General Purpose Transistor ELECTRICAL CHARACTERISTIC CURVES http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SD1664 Elektronische Bauelemente NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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