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| NPN SILICON PHOTOTRANSISTOR LED LAMPS LPT3323 SERIES Features . High illumination sensitivity . Stable characteristics . Spectrally and mechanically matched with IR emitter Package Dimension 5.0 5.9 7.6 8.6 Description 0.5 TYP 12.5MIN 1.EMITTER 2.COLLECTOR 1.0MIN 2.3TYP 1 2 The LPT3323 series are silicon nitride passivated NPN planar phototransistors with exceptionally stable characteristics and high illumination sensitivity the cases of LPT3323 are encapsulated in water clear plastic T1 3/4 package individuallt Note:1.All dimension are in millimeter tolerance is O 0.25mm unless otherwise noted 2.Specifications are subject to change without notice MAXIMUM RATINGS(Ta=25 ) E PARAMETER Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Storage Temperature Lead Soldering Temperature(1.6mm From Body) MAXIMUM RATINGS 100 30 5 -50J TO +100J -50J TO +100J 260J for 5 seconds J UNIT mw V V ELECTRICAL CHARACTERISTICS(Ta=25 E PARAMETER Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current SYMBOL V(BR)CEO V(BR)ECO VCE(sat) Tr Tf ICEO Ip(on) 1 2 4 8 DOC. NO : QW0905-LPT3323 Min. 30 5 ) Typ. Max. UNIT V V 0.4 5 5 100 2 4 8 V TEST CONDITION Ic=1mA Ee=0mw/cT IE=100g A Ee=0mw/cT Ic=0.5mA Ee=20mw/cT VCE=30V IC=800g A, RL=1K[ VCE=10V Ee=0mw/cT VCE=5v Ee=1mw/cT f P=940nm DATE : 18 - Aug - 2005 gs gs nA mA mA mA mA REV. : C |
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