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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJL21194 DESCRIPTION *Total Harmonic Distortion Characterized *High DC Current Gain *High Area of Safe Operation APPLICATIONS *Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulsed w w scs .i w 400 250 5 16 30 5 200 150 -65~150 VALUE UNIT V V .cn mi e V A A A W Base Current-Continuous Total Power Dissipation (TC=25) Junction Temperature Storage Temperature PD Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER ThermalResistance Junction To Case VALUE 0.7 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC=100mA; IB=0 B MJL21194 MIN 250 TYP. MAX UNIT V IC=8A ;IB=0.8A B 1.4 4 2.2 0.1 0.1 100 75 V V V mA mA A IC=16A ;IB=3.2A IC=8A ; VCE=5V VCE=200V,IB=0 VCE=250V; VBE(off)=1.5V VEB=5V; IC=0 Collector Capacitance Current Gain-Bandwidth Product w w scs .i w IC=8A; VCE=5V IC=16A; VCE=5V IE= 0; f=1MHz ; VCB=-10V .cn mi e 25 8 4 500 pF MHz IC=1A ;VCE= 10V; ftest=1MHz isc Websitewww.iscsemi.cn 2 |
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