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| VBE 26-12NO7 ECO-PAC TM Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) IdAV = 32 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Typ A N D VBE 26-12NO7 K Symbol IdAV x IdAVM IFSM Conditions TC = 85C, module TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 32 90 90 100 75 85 40 40 30 30 -40...+150 150 -40...+125 A A A A A A A2s A2s A2s A2s C C C V~ V~ Features * Package with DCB ceramic base plate in low profile * Isolation voltage 3000 V~ * Planar passivated chips * Low forward voltage drop * Leads suitable for PC board soldering Applications * Supplies for DC power equipment * Input and output rectifiers for high frequency * Battery DC power supplies * Field supply for DC motors Advantages * Space and weight savings * Improved temperature and power cycling capability * Small and light weight * Low noise switching Dimensions in mm (1 mm = 0.0394") I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthCH IRM trr a dS dA 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M4) typ. Conditions VR = VRRM VR = VRRM IF = 15 A TVJ = 25C TVJ = TVJM TVJ = 25C 1.5-2/14-18 Nm/lb.in. 19 g Characteristic Values typ. max. 0.1 0.5 2.73 mA mA V for power-loss calculations only per diode; DC current per diode, DC current, typ. IF = 25 A, -diF/dt = 100 A/s VR = 100 V, L = 0.05 mH, TVJ = 100C IF = 1 A; -di/dt = 100 A/s; VR = 30 V, TVJ = 25C Max. allowable acceleration creeping distance on surface creepage distance in air 5 40 1.32 V 30 mW 1.6 K/W 0.3 K/W 9.7 tbd A ns m/s2 mm mm 50 11.2 9.7 Data according to IEC 60747 refer to a single diode unless otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 032 VBE 26-12NO7 40 A 35 IF 30 25 20 15 10 5 0 0 1 2 3 VF V 4 TVJ=150C TVJ=100C TVJ= 25C 3.0 2.5 Qr 2.0 1.5 1.0 0.5 mC VVJ= 600V R T = 100C 50 TVJ= 100C A VR = 600V IRM IF= 30A IF= 15A IF= 7.5A 40 30 20 IF= 30A IF= 15A IF= 7.5A 10 0.0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 180 ns TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 120 V VFR 80 TVJ= 100C IF = 15A VFR tfr 2.0 1.2 s tfr 0.8 1.5 Kf 1.0 I RM trr 160 IF= 30A IF= 15A IF= 7.5A 140 40 0.5 Qr 0.4 120 0.0 0 40 80 120 C 160 TVJ 100 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.5464 0.2104 0.0432 0.8 ti (s) 0.0052 0.0003 0.0004 0.0092 0.01 VBE 26-12NO7 / VUE 35-12NO7 0.001 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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