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| ORANGE 1. 2. 2.1 2.2 Item No.: 190282 This specification applies to AlInGaP / GaAs LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy or Al Au alloy 3. Outlines (dimensions in microns) p-Electrode Epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode Wire-bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditions IF = 20 mA VR = 5 V min typ 2,10 max 2,40 10 Unit V A mcd nm Luminous intensity * IV IF = 10 mA 55,0 dom. wavelength IF = 20 mA 625 D * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire-bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 190282
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