|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
APTDC902U1201G Single SiC Diode Power Module VRRM = 1200V IF = 90A @ Tc = 80C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * Benefits * * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration All multiple inputs and outputs must be shorted together 1/2 ; 5/6 ; 7/8 ; 11/12 Absolute maximum ratings (per leg) Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 s Max ratings 1200 TC = 80C TC = 25C 90 1100 Unit V A APTDC902U1201G - Rev 0 February, 2009 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDC902U1201G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions IF = 90A Tj = 25C Tj = 175C Tj = 25C VR = 1200V Tj = 175C IF = 90A, VR = 600V di/dt =4500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2.3 288 504 360 864 621 Max 1.8 3.0 1800 9000 Unit V A nC pF Thermal and package characteristics (per leg) Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.22 175 125 100 4.7 80 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 www.microsemi.com 2-4 APTDC902U1201G - Rev 0 February, 2009 APTDC902U1201G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-4 APTDC902U1201G - Rev 0 February, 2009 APTDC902U1201G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.24 Thermal Impedance (C/W) 0.9 0.2 0.16 0.12 0.08 0.04 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics 900 IF Forward Current (A) IR Reverse Current (A) Reverse Characteristics 160 120 80 40 0 0 0.5 1 TJ=25C 750 600 450 300 150 0 400 TJ=75C TJ=125C TJ=175C TJ=25C TJ=75C TJ=125C TJ=175C 1.5 2 2.5 3 3.5 600 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 800 1000 1200 1400 1600 VR Reverse Voltage (V) 6300 C, Capacitance (pF) 5400 4500 3600 2700 1800 900 0 1 APTDC902U1201G - Rev 0 February, 2009 10 100 VR Reverse Voltage 1000 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 |
Price & Availability of APTDC902U1201G |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |