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APTDC902U601G
Single SiC Diode Power Module
VRRM = 600V IF = 90A @ Tc = 80C
Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers
Features * * * Benefits * * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration
All multiple inputs and outputs must be shorted together 1/2 ; 5/6 ; 7/8 ; 11/12
Absolute maximum ratings (per leg)
Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 s Max ratings 600 TC = 80C TC = 25C 90 1100 Unit V
APTDC902U601G - Rev 0 February, 2009
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTDC902U601G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics (per leg)
Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions IF = 90A Tj = 25C Tj = 175C Tj = 25C VR = 600V Tj = 175C IF = 90A, VR = 300V di/dt =2200A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2 450 900 126 585 450 Max 1.8 2.4 1800 9000 Unit V A nC pF
Thermal and package characteristics (per leg)
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.31 175 125 100 4.7 80
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
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APTDC902U601G - Rev 0 February, 2009
APTDC902U601G
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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APTDC902U601G - Rev 0 February, 2009
APTDC902U601G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.3 0.1 0.1 0.05 0.05 0.0001 0.001 0 0.00001 Single Pulse 0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 1800 IR Reverse Current (A) TJ=175C 1350 TJ=125C 900 TJ=75C
180 TJ=25C
IF Forward Current (A)
135
TJ=75C
TJ=175C 90
TJ=125C
45
450
TJ=25C
0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
0 200
300 400 500 600 700 VR Reverse Voltage (V)
800
3200 C, Capacitance (pF) 2400 1600 800 0 1 10 100 VR Reverse Voltage 1000
APTDC902U601G - Rev 0 February, 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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