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| NYC0102BLT1G Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Features Designed and tested for highly-sensitive triggering in low-power switching applications. http://onsemi.com * * * * * High dv/dt Gating Current < 200 mA Miniature SOT-23 Package for High Density PCB This is a Halogen-Free Device This is a Pb-Free Device Rating Symbol VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IFGM VRGM TJ Tstg Value Unit V 200 0.25 7.0 0.2 0.1 0.02 0.5 8.0 -40 to +125 -40 to +150 A A A2s W W A V C C 0.25 AMP, 200 VOLT SCRs G A K MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Peak Repetitive Off-State Voltage (Note 1) (RGK = IK, TJ = *40 to +110C, Sine Wave, 50 to 60 Hz On-State Current RMS (180 Conduction Angle, TC = 80C) Peak Non-repetitive Surge Current, TA = 25C, (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 msec, TA = 25C) Forward Average Gate Power (t = 8.3 msec, TA = 25C) Forward Peak Gate Current (Pulse Width 20 ms, TA = 25C) Reverse Peak Gate Voltage (Pulse Width 1.0 ms, TA = 25C) Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range 3 1 2 MARKING DIAGRAM C2B MG G 1 SOT-23 CASE 318 STYLE 8 C2B = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. PIN ASSIGNMENT 1 2 3 Cathode Gate Anode THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board TA = 25C Thermal Resistance, Junction-to-Ambient Symbol PD RqJA Max 225 380 Unit mW C/W ORDERING INFORMATION Device NYC0102BLT1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 December, 2008 - Rev. 0 1 Publication Order Number: NYC0102BL/D NYC0102BLT1G ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Peak Repetitive Forward Blocking Current (VDRM = 200 V, RGK = 1 kW) Peak Repetitive Reverse Blocking Current (VDRM = 200 V, RGK = 1 kW) ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 0.4 A, tp < 1 ms, TC = 25C) Gate Trigger Current (VD = 12 V, RL = 100 W, TC = 25C) Gate Trigger Voltage (VD = 12 V, RL = 100 W, TC = 25C) Holding Current (IT = 50 mA, RGK = 1 kW, TC = 25C) Gate Non-Trigger Voltage (VD = VDRM , RL = 3.3 kW, TC = 125C) Latching Current (IG = 1.0 mA, RGK = 1 kW, TC = 25C) Gate Reverse Voltage (IRG = 10 mA) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (RGK = 1 kW, TC = 125C) Critical Rate of Rise of On-State Current (IG = 2xIGT 60 Hz, tr < 100 ns, TJ = 125C) dv/dt di/dt 200 - - - - 50 V/ms A/ms VTM IGT VGT IH VGD IL VRG - - - - 0.1 - 8.0 - - - - - - - 1.7 200 0.8 6.0 - 7.0 - V mA V mA V mA V TC = 25C TC = 125C TC = 25C TC = 125C IDRM - - - - - - - - 1.0 100 1.0 100 mA mA mA mA Symbol Min Typ Max Unit IRRM Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) http://onsemi.com 2 NYC0102BLT1G 0.25 IT, AVERAGE CURRENT (A) 0.2 0.15 0.1 0.05 0 0.3 0.25 0.2 0.15 0.1 0.05 0 180 DC P, AVERAGE POWER (W) 0 0.05 0.1 0.15 0.2 0 50 100 150 IT, AVERAGE CURRENT (A) T, TEMPERATURE (C) Figure 1. Maximum Average Power vs. Average Current 7 TRANSIENT RESISTANCE (NORMALIZED) 6 5 ITSM (A) 4 3 2 1 0 1 10 100 1000 NUMBER OF CYCLES 1 0.8 0.6 0.4 0.2 Figure 2. Current Derating 0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 PULSE DURATION (s) Figure 3. Surge Current ITSM vs. Number of Cycles Figure 4. Thermal Response 10 2 1.5 ITM, (A) RGK = 1k Gate Open 1 125C 25C 1 0.5 0.1 0 0.5 1 1.5 VTM, (V) 2 2.5 0 200 250 300 TJ, (K) 350 400 Figure 5. ON-State Characteristics Figure 6. Gate Trigger Current vs. TJ (Normalized to 255C) http://onsemi.com 3 NYC0102BLT1G 2 0.07 0.06 1.5 Gate Open IGT (mA) RGK = 1k 0.05 0.04 0.03 0.02 0.01 0 200 250 300 TJ, (K) 350 400 0 0 2 4 6 RGK, (kW) 8 10 12 1 0.5 Figure 7. Gate Trigger Current vs. TJ (Normalized to 255C) 0.2 2000 Figure 8. Gate Trigger Current vs. RGK 0.15 dV/dt (V/ms) 1500 IH,IL (mA) 0.1 1000 0.05 500 0 0 2 4 6 RGK, (kW) 8 10 12 0 0 2 4 6 RGK, (kW) 8 10 12 Figure 9. Holding and Latching Current vs. RGK Figure 10. dV/dt vs. RGK 1.0 0.80 0.60 0.40 0.20 0 VGT (V) 200 250 300 TJ, (K) 350 400 Figure 11. Gate Triggering Voltage vs. TJ http://onsemi.com 4 NYC0102BLT1G PACKAGE DIMENSIONS SOT-23 (TO-236)] CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NYC0102BL/D |
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