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| DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2515M 15 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 17 2003 Sep 15 NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to reduced heat generation * Reduced printed-circuit board requirements. APPLICATIONS * Power management: - DC-DC converter - Supply line switching - Battery charger - LCD backlighting. * Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load drivers (e.g. relays, buzzers and motors). handbook, halfpage PBSS2515M QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 15 500 1 <500 UNIT V mA A m 3 3 1 2 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3515M. MARKING TYPE NUMBER PBSS2515M MARKING CODE S2 1 Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol. 2003 Sep 15 2 NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes 1. Refer to SOT883 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; notes 1 and 2 Tamb 25 C; note 1 and 3 CONDITIONS open emitter open base open collector notes 1 and 2 - - - - - - - - -65 - -65 MIN. PBSS2515M MAX. 15 15 6 500 1 100 250 430 +150 150 +150 V V V UNIT mA A mA mW mW C C C 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 m copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; notes 1 and 2 in free air; notes 1, 3 and 4 VALUE 500 290 UNIT K/W K/W Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 m copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 4. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. Soldering Reflow soldering is the only recommended soldering method. 2003 Sep 15 3 NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 15 V; IE = 0 VCB = 15 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 100 mA; note 1 VCE = 2 V; IC = 500 mA; note 1 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 200 mA; IB = 10 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 500 mA; IB = 50 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 VCE = 2 V; IC = 100 mA; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz MIN. - - - 200 150 90 - - - - - - 250 - PBSS2515M TYP. - - - - - - - - - 360 - - 420 4.4 MAX. 100 50 100 - - - 25 150 250 <500 1.1 0.9 - 6 UNIT nA A nA mV mV mV m V V MHz pF 2003 Sep 15 4 NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M handbook, halfpage (1) 600 MLE098 handbook, halfpage 1200 VBE 1000 MLE100 hFE (mV) 400 (2) (1) 800 (2) 600 200 (3) (3) 400 0 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) 102 MLE102 handbook, halfpage 1200 MLE101 VBEsat (mV) 1000 (1) 800 (2) (1) (2) 600 10 (3) (3) 400 1 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Sep 15 5 NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M handbook, halfpage 1 MLE099 IC (A) (3) (2) (1) 102 handbook, halfpage RCEsat MLE103 0.8 (4) (5) (6) () 10 (1) 0.6 (7) (8) (2) (3) 0.4 (9) 1 0.2 (10) 0 0 0.5 1 1.5 VCE (V) Tamb = 25 C. (1) (2) (3) (4) IB = 7 mA. IB = 6.3 mA. IB = 5.6 mA. IB = 4.9 mA. (5) (6) (7) (8) IB = 4.2 mA. IB = 3.5 mA. IB = 2.8 mA. IB = 2.1 mA. (9) IB = 1.4 mA. (10) IB = 0.7 mA. 2 10-1 10-1 1 10 102 IC (mA) 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.7 Fig.6 Collector current as a function of collector-emitter voltage; typical values. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Sep 15 6 NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PACKAGE OUTLINE PBSS2515M Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 L 2 b e L1 3 b1 1 e1 A A1 E D 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 2003 Sep 15 7 NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PBSS2515M This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2003 Sep 15 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp9 Date of release: 2003 Sep 15 Document order number: 9397 750 11782 |
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