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A Product Line of Diodes Incorporated
ZXMHC3A01N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS QG RDS(on) 125m @ VGS= 10V N-CH 30V 3.9nC 180m @ VGS= 4.5V 210m @ VGS= -10V P-CH -30V 5.2nC 330m @ VGS= -4.5V -1.6A 2.2A -2.1A ID TA= 25C 2.7A
Description
This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
*
2 x N + 2 x P channels in a SOIC package
P1D/N1D
P2D/N2D
Applications
* *
DC Motor control DC-AC Inverters
N1G
N2G
N1S/N2S
Ordering information
Device ZXMHC3A01N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
Device marking
ZXMHC 3A01
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ZXMHC3A01N8
Absolute maximum ratings
Parameter
Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25C @ VGS= 10V; TA=70C @ VGS= 10V; TA=25C @ VGS= 10V; TL=25C Pulsed Drain current @ VGS= 10V; TA=25C
(c) (b) (b) (b) (a) (f)
Symbol
VDSS VGS ID
Nchannel
30 20 2.72 2.18 2.17 2.21
Pchannel
-30 20 -2.06 -1.65 -1.64 -1.67 -8.84 -1.60 -8.84
Unit
V V A
IDM IS ISM PD PD PD Tj, Tstg
11.7 1.60 11.7 0.87 6.94 1.36 10.9 0.90 7.19
A A A W mW/C W mW/C W mW/C C
Continuous Source current (Body diode) at TA =25C Pulsed Source current (Body diode) at TA =25C Power dissipation at TA =25C Linear derating factor Power dissipation at TA =25C Linear derating factor Power dissipation at TL =25C Linear derating factor
(a) (b) (f) (c)
Operating and storage temperature range
-55 to 150
Thermal resistance
Parameter
Junction to ambient Junction to ambient Junction to ambient Junction to ambient Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. Same as note (a), except the device is measured at t 10 sec. Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a steady-state condition with one active die. Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die.
Symbol
(a) (b) (d) (e)
Value
144 92 106 254 139
Unit
C/W C/W C/W C/W C/W
RJA RJA RJA RJA RJL
(f)
(b) (c) (d)
(e) (f)
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Thermal characteristics
10 RDS(ON)
10
RDS(ON) Limited
1
DC 1s 100ms 10ms Note (a) Single Pulse, T amb=25C 1ms 100us
-ID Drain Current (A)
ID Drain Current (A)
Limited
1
DC 1s 100ms 10ms Note (a) Single Pulse, T amb=25C 1ms 100us
100m
100m
10m
10m
1
10
1
10
VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
140 120 100 80 60 40 20 0 100 1m 10m 100m 1
D=0.2 Single Pulse D=0.05 D=0.1 D=0.5
-VDS Drain-Source Voltage (V)
P-channel Safe Operating Area
1.0
Max Power Dissipation (W)
Thermal Resistance (C/W)
One Active Die 25 x 25mm 1oz
Any one active die
0.5
0.0 0 25 50 75 100 125 150
10
100
1k
Pulse Width (s)
Temperature (C)
Transient Thermal Impedance
100
One Active Die Single Pulse T amb=25C
Derating Curve
Maximum Power (W)
10
1 100 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
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N-channel electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (a) on-state resistance Forward (a) (c) Transconductance V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 3.5 1.0 30 0.5 V A nA V S ID = 250A, VGS= 0V VDS= 30V, VGS= 0V VGS= 20V, VDS= 0V ID= 250A, VDS= VGS VGS= 10V, ID= 2.5A VGS= 4.5V, ID= 2.0A VDS= 15V, ID= 2.5A
100
3.0 0.125 0.180
Dynamic
Capacitance
(c)
Input capacitance Output capacitance Reverse transfer capacitance Switching
(b) (c)
Ciss Coss Crss
190 38 20
pF pF pF VDS= 25V, VGS= 0V f= 1MHz
Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge
(c)
td(on) tr td(off) tf
1.7 2.3 6.6 2.9
ns ns ns ns VDD= 15V, VGS= 10V ID= 2.5A RG 6.0,
Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time
(a) (c) (c)
Qg Qgs Qgd
3.9 0.6 0.9
nC nC nC VDS=15V, VGS= 10V ID= 2.5A
VSD trr Qrr 17.7 13.0
0.95
V ns nC
IS= 1.25A, VGS= 0V IS= 2.5A, di/dt= 100A/s
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing
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ZXMHC3A01N8
N-channel typical characteristics
ID Drain Current (A)
ID Drain Current (A)
10
T =25 C
10V
7V
5V 4.5V 4V 3.5V
10
T =150 C
10V
7V
5V 4.5V 4V 3.5V
1
VGS
3V
1
VGS
3V 2.5V
0.1
2.5V
0.1
2V
0.1
VDS Drain-Source Voltage (V)
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
Output Characteristics
10 1.6
Output Characteristics
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
VDS =10V
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
VGS =10V ID =2.5A RDS(on)
T =150 C
1
VGS(th) VGS =VDS ID =250uA
T =25 C
0.1 2.0
2.5
3.0
3.5
4.0
4.5
5.0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature ( C)
Typical Transfer Characteristics
Normalised Curves v Temperature
RDS(on) Drain-Source On-Resistance ()
ISD Reverse Drain Current (A)
2.5V
3V
3.5V
4V
VGS
10
T =150 C
1
4.5V 5V 7V 10V
1
0.1
T =25 C
T =25 C
0.1 0.4 0.6 0.8 1.0 1.2
0.1
ID Drain Current (A)
1
10
On-Resistance v Drain Current
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
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N-channel typical characteristics -continued
300 250 200 150 100 50 0 0.1 1 10
CISS COSS CRSS
10
VGS Gate-Source Voltage (V)
C Capacitance (pF)
VGS =0V f =1MHz
ID =2.5A
8 6 4 2 0
VDS =15V
0
1
2
3
4
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
Test circuits
Current regulator
QG
12V 50k Same as D.U.T
VG
QGS
QGD
VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90%
VGS RG RD VDS VDD
10% VGS td(on) t(on) tr td(off) t(on) tr
Switching time waveforms
Switching time test circuit
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ZXMHC3A01N8
P-channel electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (a) on-state resistance Forward (a) (c) Transconductance V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 2.5 -1.0 -30 -0.5 V A nA V S ID = -250A, VGS= 0V VDS= -30V, VGS= 0V VGS= 20V, VDS= 0V ID= -250A, VDS= VGS VGS= -10V, ID= -1.4A VGS= -4.5V, ID= -1.1A VDS= -15V, ID= -1.4A
100
-3.0 0.210 0.330
Dynamic
Capacitance
(c)
Input capacitance Output capacitance Reverse transfer capacitance Switching
(b) (c)
Ciss Coss Crss
204 39.8 25.8
pF pF pF VDS= -15V, VGS= 0V f= 1MHz
Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge
(c)
td(on) tr td(off) tf
1.2 2.3 12.1 7.5
ns ns ns ns VDD= -15V, VGS= -10V ID= -1.0A RG 6.0
Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time
(a) (c) (c)
Qg Qgs Qgd
5.2 0.7 0.9
nC nC nC VDS= -15V, VGS= -10V ID= -1.4A
VSD trr Qrr
-0.85 19 15
-0.95
V ns nC
IS= -1.5A, VGS= 0V IS= -0.95A, di/dt= 100A/s
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing
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ZXMHC3A01N8
P-channel typical characteristics
10
T =25 C
10V
-ID Drain Current (A)
-ID Drain Current (A)
5V
4V 3.5V 3V 2.5V -VGS 2V
10
T =150 C
10V
5V
4V 3.5V 3V 2.5V 2V
1
1
0.1
0.1
-VGS 1.5V
0.01 0.1
0.01 0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.6 Normalised RDS(on) and VGS(th)
Output Characteristics
-ID Drain Current (A)
1.4 1.2 1.0
VGS =-10V ID =-1.4A R DS(on)
1
T =150 C
T =25 C
VGS(th)
0.1 1 2 3
-VDS =10V
0.8 0.6 -50
VGS =VDS ID =-250uA
4
5
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature ( C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
2V -VGS 2.5V
Normalised Curves v Temperature
10
T =150 C
-ISD Reverse Drain Current (A)
100
T =25 C
10
3V 3.5V 4V
1
1
5V 10V
0.1
T =25 C
0.1
0.1
1
10
0.01 0.2
0.4
0.6
0.8
1.0
1.2
1.4
On-Resistance v Drain Current
-ID Drain Current (A)
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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P-channel typical characteristics -continued
300 250 200
CISS
10
-VGS Gate-Source Voltage (V)
VGS =0V f =1MHz
ID =-1.4A
C Capacitance (pF)
8 6 4 2
VDS =-15V
150 100 50 0 0.1 1
COSS CRSS
10
0
0
2
4
6
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC) Gate-Source Voltage v Gate Charge
Test circuits
Current regulator
QG
12V 0.2 F 50k Same as D.U.T
VG
QGS
QGD
VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90%
VGS RG RD VDS VDD
10% VGS tr t(on) td(off) tr t(on) td(on)
Pulse width 1 S Duty factor 0.1%
Switching time waveforms
Switching time test circuit
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Packaging details - SO8
DIM
Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050
Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27
DIM
Inches Min. Max.
Millimeters Min. Max.
A A1 D H E L
0.053 0.004 0.189 0.228 0.150 0.016
e b c -
0.050 BSC 0.013 0.008 0 0.020 0.010 8 -
1.27 BSC 0.33 0.19 0 0.51 0.25 8 -
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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