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TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
600V, 200A, VCE(ON) = 2.0V Typical
APT200GT60JRDL
Resonant Mode Combi IGBT(R)
The Thunderbolt IGBT(R) used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switching speed.
E
E
G
C
7 22 TSO
"UL Recognized"
file # E145592
Features
* Low Forward Voltage Drop * Low Tail Current * Integrated Gate Resistor Low EMI, High Reliability * Low forward Diode Voltage (VF) * RoHS Compliant * Ultra soft recovery diode * RBSOA and SCSOA Rated * High Frequency Switching to 50KHz * Ultra Low Leakage Current
Typical Applications
* ZVS Phase Shifted Bridge * Resonant Mode Switching * Phase Shifted Bridge * Welding * Induction heating * High Frequency SMPS
ISOTOP (R)
C
G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT200GT60JRDL UNIT Volts
600 30 195 100 600 600A @ 600V 595 -55 to 150
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 4mA, Tj = 25C) MIN TYP MAX Units
600 3 1.6 4 2.0 2.5 50
2
5 2.5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
I CES I GES
A nA
Rev A 4-2009 052-6357
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 30V)
1500 600
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 6 5
APT200GT60JRDL
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 200A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 200A RG = 2.2 TJ = +25C MIN TYP MAX UNIT
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
8650 546 1180 7.5 946 58 430 600 72 160 952 212 9193 19290 71 157 1030 202 10460 20210 J
ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time
ns
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 200A RG = 2.2 TJ = +125C
Turn-on Switching Energy (Diode)
66
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MIN TYP MAX UNIT C/W gm Volts
.21 .61 29.2 2500
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
052-6357
Rev A 4-2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
250 225 IC, COLLECTOR CURRENT (A) 200 175 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE V
GE
APT200GT60JRDL
400 350 13/15V 12V 11V
= 15V
TJ= 125C TJ= 25C
TJ= 150C
IC, COLLECTOR CURRENT (A)
300 250 200 150 100 50 0 8V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 200A C T = 25C
J
10V
TJ= 55C
9V
350 300 IC, COLLECTOR CURRENT (A) 250 200 150 100 50 0 0
20
15
VCE = 120V VCE = 300V
10 VCE = 480V 5
TJ= 25C TJ= 125C 2 4 6 8
TJ= -55C
10
12
0
0
250
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
500 750 GATE CHARGE (nC) FIGURE 4, Gate charge
1000
5 4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
5
4 IC = 400A 3 IC = 200A 2 IC = 100A
IC = 400A 3 IC = 200A 2 1 0 IC = 100A
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
6
0
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0
25
250
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
IC, DC COLLECTOR CURRENT (A)
200
150
50
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
50
052-6357
0
Rev A 4-2009
100
APT200GT60JRDL
100 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 1400 1200 1000 800 600 400 200 0
VCE = 400V RG = 2.2 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C
80
60
40
VCE = 400V TJ = 25C, or 125C RG = 2.2 L = 100H
20
0
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
RG = 2.2, L = 100H, VCE = 400V
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 450 400
RG = 2.2, L = 100H, VCE = 400V
400
300 tr, RISE TIME (ns) tr, FALL TIME (ns)
350 300 250 200 150 100 50
TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V
200
100
TJ = 25 or 125C,VGE = 15V
0
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 2.2
G
0
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
V = 400V CE V = +15V GE R = 2.2
G
40000 Eon2, TURN ON ENERGY LOSS (J) 35000 30000 25000 20000 15000 10000 5000 0
50000
40000
TJ = 125C
TJ = 125C
30000
20000
TJ = 25C
10000
TJ = 25C
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 100000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE T = 125C
J
50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 60000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 2.2
G
0
Eoff,400A
Eon2,400A
80000
50000 40000
60000
Eon2,400A
Eoff,400A
30000 20000 10000 0
Eoff,200A Eon2,200A
Rev A 4-2009
40000
Eoff,200A Eon2,200A
20000
Eoff,100A Eon2,100A
Eon2,100A Eoff,100A
052-6357
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
100,000 1000
APT200GT60JRDL
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
10,000
Cies
100
10
1,000 Coes Cres 100 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.25 ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9
0.15
0.7 0.5
0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
40 FMAX, OPERATING FREQUENCY (kHz)
75C
T = 125C J T = 75C C D = 50 % V = 400V CE R = 1.0
G
30
20
100C
F
10
= min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
max
f max2 =
0
Pdiss - P cond E on2 + E off TJ - T C R JC
Pdiss =
-10 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 10 20
052-6357
Rev A 4-2009
APT200GT60JRDL
10%
Gate Voltage td(on) tr 90% Collector Current
APT100DL60
TJ = 125C
V CC
IC
V CE
10% 5%
5%
A D.U.T.
Switching Energy
CollectorVoltage
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
TJ = 125C
90% td(off)
tf Collector Current
10%
0
CollectorVoltage
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6357
Rev A 4-2009
TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS Symbol
IF(AV) IF(RMS) IFSM
All Ratings: TC = 25C unless otherwise specified. APT200GT60JRDL
100 116 640 Amps
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 50C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol
VF
Characteristic / Test Conditions
IF = 100A Forward Voltage IF = 200A IF = 50A, TJ = 125C
Min
Type
1.25 2.0 1.25
Max
1.6
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
Characteristic
Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF =100A, diF/dt = -200A/s VR = 400V, TC = 25C
Min
-
Typ 56 379 2202 12 580 5925 19 264 9530 61
Max
-
Unit
ns nC Amps ns nC Amps ns nC Amps
IF = 100A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 100A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
0.7 ZJC, THERMAL IMPEDANCE (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Rev A 4-2009 052-6357
TYPICAL PERFORMANCE CURVES (ratings per diode)
120 TJ= 125C 100 IF, FORWARD CURRENT (A) TJ= 55C 80 TJ= 25C 60 40 20 0 TJ= 150C trr, COLLECTOR CURRENT (A) 700 100A 600 500 400 300 200 100 0 25A
APT200GT60JRDL
T = 125C J V = 400V
R
50A
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage
T = 125C J V = 400V
R
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 45 IRRM, REVERSE RECOVERY CURRENT (A)
T = 125C J V = 400V
R
Qrr, REVERSE RECOVERY CHARGE (nC)
8000 7000 6000 5000 4000 3000 2000 1000
100A
40 35 30 25 20 15 10 5 0
50A 100A
50A 25A
25A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0 tRR IRRM QRR
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 160 140 120 100 80 60 40 20
Duty cycle = 0.5 TJ = 126C
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
IF(AV) (A)
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 CJ, JUNCTION CAPACITANCE (pF)
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
450 400 350 300 250 200 150 100 50 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0 0
052-6357
Rev A 4-2009
TYPICAL PERFORMANCE CURVES
r +18V 0V D.U.T. 30H diF /dt Adjust
APT10035LLL
APT200GT60JRDL
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32, Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode ) Dimensions in Millimeters and (Inches
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6357
Rev A 4-2009

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