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| APTGT20X60T3G 3 Phase bridge Trench + Field Stop IGBT(R) Power Module 15 16 19 20 18 23 25 29 30 22 28 R1 31 14 VCES = 600V IC = 20A @ Tc = 80C Application * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS compliant 11 10 12 8 7 4 3 2 13 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 32 20 40 20 62 40A @ 550V Unit V A July, 2007 1-5 APTGT20X60T3G - Rev 0 V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT20X60T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 20A Tj = 150C VGE = VCE , IC = 300A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 300 Unit A V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 20A RG = 12 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 20A RG = 12 Tj = 25C VGE = 15V VBus = 300V Tj = 150C IC = 20A Tj = 25C RG = 12 Tj = 150C Min Typ 1100 70 35 110 45 200 40 120 50 250 60 0.11 0.2 0.5 0.7 ns Max Unit pF ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 100 350 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=600V IF = 20A VGE = 0V 20 1.6 1.5 100 150 1.1 2.3 0.23 0.50 2 V ns C mJ July, 2007 2-5 APTGT20X60T3G - Rev 0 IF = 20A VR = 300V di/dt =1600A/s www.microsemi.com APTGT20X60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 3952 Max Unit k K Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 2.4 3.25 175 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT20X60T3G - Rev 0 July, 2007 17 28 APTGT20X60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 40 35 30 IC (A) TJ=150C TJ = 150C VGE=19V 40 35 30 IC (A) TJ=25C TJ=125C 25 20 15 10 5 0 0 0.5 1 TJ=25C 25 20 15 10 5 0 VGE=13V VGE=15V VGE=9V 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 40 35 30 Transfert Characteristics 1.25 TJ=25C Energy losses vs Collector Current VCE = 300V VGE = 15V RG = 12 TJ = 150C 1 E (mJ) 0.75 0.5 0.25 Eoff Er 25 IC (A) 20 15 10 5 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 1.5 VCE = 300V VGE =15V IC = 20A TJ = 150C TJ=125C TJ=150C TJ=25C Eon 0 0 10 20 IC (A) Reverse Bias Safe Operating Area 50 Eon 30 40 Eoff 40 IC (A) 30 20 Er 1 E (mJ) 0.5 10 0 Eon VGE=15V TJ=150C RG=12 0 10 30 50 70 Gate Resistance (ohms) 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.8 Thermal Impedance (C/W) 2.4 2 1.6 1.2 0.8 0.4 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 IGBT 0.05 0 0.00001 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT20X60T3G - Rev 0 July, 2007 APTGT20X60T3G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 0 5 10 15 IC (A) 20 25 30 Hard switching VCE=300V D=50% RG=12 TJ=150C Tc=85C Forward Characteristic of diode 40 35 30 25 IF (A) 20 15 10 5 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 TJ=125C TJ=150C TJ=25C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3.5 Thermal Impedance (C/W) 3 2.5 2 1.5 1 0.5 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.05 0 0.00001 0.9 0.7 0.5 0.3 Diode Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT20X60T3G - Rev 0 July, 2007 |
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