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| APTGT50A170T1G Phase leg Trench + Field Stop IGBT(R) Power Module 5 Q1 7 8 Q2 9 10 1 2 12 CR2 3 4 NTC 6 11 VCES = 1700V IC = 50A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant CR1 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1700 75 50 100 20 312 100A @ 1600V Unit V A V W August, 2007 1-5 APTGT50A170T1G - Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT50A170T1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 50A RG = 10 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 50A RG = 10 VGE = 15V Tj = 125C VBus = 900V IC = 50A Tj = 125C RG = 10 Min Typ 4400 180 150 370 40 650 180 400 50 800 300 16 mJ 15 Max Unit pF ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1700 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 50A 50 1.8 1.9 385 490 14 23 6 12 2.2 V ns August, 2007 2-5 APTGT50A170T1G - Rev 0 IF = 50A VR = 900V di/dt =800A/s C mJ www.microsemi.com APTGT50A170T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 3500 -40 -40 -40 2.5 Min Typ Max 0.40 0.70 150 125 100 4.7 80 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 - T25 T Min Typ 50 3952 Max Unit k K SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50A170T1G - Rev 0 August, 2007 APTGT50A170T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 TJ = 125C 80 IC (A) 60 40 20 0 VGE=20V 100 80 IC (A) TJ=25C 60 40 20 0 0 0.5 1 1.5 2 2.5 VCE (V) TJ=125C VGE=13V VGE=15V VGE=9V 3 3.5 4 0 1 2 3 VCE (V) 4 5 100 80 60 40 20 0 5 6 Transfert Characteristics 50 TJ=25C Energy losses vs Collector Current VCE = 900V VGE = 15V RG = 10 TJ = 125C Eon 40 TJ=125C E (mJ) IC (A) 30 20 10 0 Eoff TJ=125C Er 7 8 9 VGE (V) 10 11 12 13 0 20 40 IC (A) 60 80 100 Switching Energy Losses vs Gate Resistance 50 40 E (mJ) 30 20 10 Er VCE = 900V VGE =15V IC = 50A TJ = 125C Reverse Bias Safe Operating Area 125 Eon 100 IC (A) 75 50 25 0 VGE=15V TJ=125C RG=10 Eoff 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 0 400 800 1200 1600 2000 VCE (V) 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50A170T1G - Rev 0 0.1 0.05 Single Pulse August, 2007 APTGT50A170T1G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 30 25 20 15 10 5 0 0 10 20 30 40 IC (A) 50 60 70 80 hard switching ZVS VCE=900V D=50% RG=10 TJ=125C TC=75C Forward Characteristic of diode 100 90 80 70 60 50 40 30 20 10 0 0 TJ=25C IF (A) ZCS TJ=125C TJ=125C 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 Thermal Impedance (C/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50A170T1G - Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein August, 2007 |
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