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| CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 55m (typ) @VGS = 4.5V. RDS(ON) = 82m (typ) @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C 8 3 10 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 100 Units C/W 2003.August 7 - 10 http://www.cetsemi.com CES2302 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.94A VDS = 10V, ID = 3.6A, VGS = 4.5V VDD = 10V, ID = 3.6A, VGS = 4.5V, RGEN = 6 23 11 34 36 6 1.4 1.8 0.94 1.2 45 30 70 70 10 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 10A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V VGS = VDS, ID = 250A VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.6A 0.65 55 82 8.5 237 120 45 Min 20 1 100 -100 1.2 72 110 Typ Max Units V A nA nA V m m S pF pF pF 7 VDS = 10V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 7 - 11 CES2302 10 VGS=4.5,3.5,2.5V 10 25 C ID, Drain Current (A) 6 ID, Drain Current (A) 8 8 6 VGS=2.0V 4 4 2 VGS=1.5V 2 TJ=125 C 0 -55 C 2 3 0 0 1 2 3 4 5 0 1 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 600 500 400 300 Ciss 200 Coss 100 0 0 5 10 15 20 25 Crss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=3.6A VGS=4.5V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250A IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.2 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 7 - 12 CES2302 VGS, Gate to Source Voltage (V) 5 V =10V DS ID=3.6A ID, Drain Current (A) 4 10 1 RDS(ON)Limit 1ms 10ms 100ms 1s DC 3 10 0 2 10 -1 1 0 0 2 4 6 10 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 7 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 Single Pulse -4 PDM t1 t2 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 7 - 13 |
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