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| Shantou Huashan Electronic Devices Co.,Ltd. H2N7000 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. TO-92 Features High density cell design for low Rds(on). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. 1- S 2-G 3-D Maximum Ratings Ta=25ae T stg Tj V DSS VDGR VGSS ID PD unless otherwise specified(c) Storage Temperature ------------------------------------------------------ -55~150ae Operating Junction Temperature ---------------------------------------------- -55~150ae Drain-Source Voltage ---------------------------------------------------------- 60V Drain-Gate Voltage (RGSU 1M| ) --------------------------------------------------------Gate-Source Voltage -----------------------------------------------------------------------Drain Current (Continuous) ---------------------------------------------------------------Maximum Power Dissipation ----------------------------------------------------------60V 20V 200mA 400mW Electrical Characteristics Ta=25ae Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VDS(ON) ID (ON) Items Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Time Turn - Off Time unless otherwise specified(c) Typ. Max. 1 Unit V Conditions VGS=0V, ID=10A VDS =48V, VGS=0V VGS= 15V , VDS =0V VDS = VGS , ID=1mA VGS=10V, ID=500mA VGS=4.5V, ID=75mA VGS=10V, ID=500mA VGS=4.5V, ID=75mA VGS=4.5V, VDS =10V VDS=10V, ID=200mA VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 15 V, RL = 25 ,ID = 500 m A,VGS = 10 V, RGEN = 25 Min. 60 A nA V 10 0.8 3.0 5 5.3 2.5 0.4 75 320 20 11 4 50 25 5 10 10 V V mA mS pF pF pF nS nS gFS Ciss Coss Crss ton toff Shantou Huashan Electronic Devices Co.,Ltd. H2N7000 Performance Curves Shantou Huashan Electronic Devices Co.,Ltd. H2N7000 Performance Curves Shantou Huashan Electronic Devices Co.,Ltd. H2N7000 Performance Curves |
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