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PD - 97390
IRLB8721PBF
Applications
l l l
HEXFET(R) Power MOSFET
Optimized for UPS/Inverter Applications
High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
VDSS RDS(on) max Qg (typ.) 30V 8.7m:@VGS = 10V 7.6nC
D
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free
G
D
S
TO-220AB IRLB8721PBF G D S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 62 44 250 65 33 0.43 -55 to + 175 300 (1.6mm from case) 10lbxin (1.1Nxm)
Units
V
c
A
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
W W/C
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
C
Thermal Resistance
RJC RCS RJA Junction-to-Case
g f
Parameter
Typ.
--- 0.5 ---
Max.
2.3 --- 62
Units
C/W
Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Notes through are on page 9
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1
4/22/09
IRLB8721PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energyd Avalanche CurrentA
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 35 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 21 6.5 13.1 1.80 -7.0 --- --- --- --- --- 7.6 1.9 1.2 3.4 2.0 4.6 7.9 2.3 9.1 93 9.0 17 1077 360 110 --- --- 8.7 16 2.35 --- 1.0 150 100 -100 --- 13 --- --- --- --- --- --- 3.8 --- --- --- --- --- --- --- Typ. --- --- pF ns nC nC VDS = 15V VGS = 4.5V ID = 25A S nA V mV/C A V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 31A VGS = 4.5V, ID
e = 25A e
VDS = VGS, ID = 25A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 25A
See Fig. 16 VDS = 15V, VGS = 0V VDD = 15V, VGS = 4.5Ve ID = 25A RG = 1.8 See Fig. 14 VGS = 0V VDS = 15V = 1.0MHz Max. 98 25 Units mJ A
Avalanche Characteristics
EAS IAR
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 16 14 62 A 250 1.0 24 21 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V TJ = 25C, IF = 25A, VDD = 15V di/dt = 200A/s
e
2
e
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IRLB8721PBF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V
TOP
100
BOTTOM
VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V
10
10
3.0V
3.0V
1 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
60s PULSE WIDTH Tj = 175C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 25A
ID, Drain-to-Source Current (A)
VGS = 10V
1.5
100
10
TJ = 175C TJ = 25C
1
1.0
VDS = 15V
0.1 0.0 2.0 4.0
60s PULSE WIDTH
6.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRLB8721PBF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
14 12 10 8 6 4 2 0
ID= 25A VDS= 24V VDS= 15V
C, Capacitance (pF)
1000
Ciss Coss
Crss
100
10 1 10 100
0
4
8
12
16
20
24
28
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS (on) 100sec 1msec
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
TJ = 175C
100
10
10
10msec
TJ = 25C
1
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
TC= 25C TJ = 175C
Single Pulse 0.1 0.1 1 10 100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLB8721PBF
80
2.5
ID , Drain Current (A)
60
VGS(th) Gate threshold Voltage (V)
2.0
ID = 1.0mA ID = 250A ID = 25A
40
1.5
20
1.0
0 25 50 75 100 125 150 175
0.5 -75 -50 -25 0 25 50 75 100 125 150 175
TC , CaseTemperature (C)
TJ , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( ZthJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 C
1
2
3
4
4
0.01
Ci= i/Ri Ci i/Ri
Ri (C/W) 0.003454 0.17246 0.786312 1.368218
(sec)
13.68748 7.21E-05 0.001227 0.007178
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLB8721PBF
) RDS(on), Drain-to -Source On Resistance (m
EAS, Single Pulse Avalanche Energy (mJ)
32 28 24 20 16 12 8 4 2 4 6 TJ = 25C 8 10 TJ = 125C ID = 31A
400
300
ID 5.4A 10A BOTTOM 25A
TOP
200
100
0 25 50 75 100 125 150 175
VGS, Gate -to -Source Voltage (V)
Starting TJ , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13a. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS tp
15V
VDS
L
DRIVER
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 13b. Unclamped Inductive Test Circuit
RD
Fig 13c. Unclamped Inductive Waveforms
VDS VGS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
VDS 90%
D.U.T.
+
-V DD
10% VGS
td(on) tr t d(off) tf
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
6
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IRLB8721PBF
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgodr
Qgd
Qgs2 Qgs1
Current Sampling Resistors
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
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IRLB8721PBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLB8721PBF
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
When mounted on 1" square PCB (FR-4 or G-10 Material).
max. junction temperature. Starting TJ = 25C, L = 0.32mH, RG = 25, IAS = 25A. Pulse width 400s; duty cycle 2%.
For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2009
9

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