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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min.) *Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS *Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B MJ411 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak VALUE 300 300 UNIT V Base Current-Continuous PC TJ Tstg Collector Power Dissipation@TC=25 Junction Temperature ww w PARAMETER scs .i 5 5 10 2 100 150 -65~200 MAX 0.75 .cn mi e V V A A A W Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c UNIT /W Thermal Resistance,Junction to Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MJ411 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.2 V ICEO Collector Cutoff Current VCE=300V; IB= 0 0.25 mA ICEX Collector Cutoff Current VCB=300V;VEB(off)=1.5V;TC=125 IEBO Emitter Cutoff current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product w w w. sem isc VEB= 5V; IC= 0 IC= 1A; VCE=5V IC= 2.5A; VCE=5V .cn i 30 10 2.5 0.5 mA 5.0 mA 90 IC= 0.2A; VCE=10V; f=1.0MHz MHz isc Websitewww.iscsemi.cn |
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