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Thyristor Modules Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 312 PSKH 312
ITRMS ITAVM VRRM
= 2x 520 A = 2x 320 A = 1200-1800 V
3
VRSM VDSM V 1300 1500 1700 1900
VRRM VDRM V 1200 1400 1600 1800
Type
1
2
76 5 4
PSKT PSKT PSKT PSKT
312-12io1 312-14io1 312-16io1 312-18io1
PSKH PSKH PSKH PSKH
312-12io1 312-14io1 312-16io1 312-18io1
Symbol
ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM
Test Conditions
TVJ = TVJM TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz)
Maximum Ratings
520 320 9200 10100 8000 8800 423 000 423 000 320 000 321 000 100 500 1000 120 60 20 10 -40...+140 140 -40...+125 A A A A A A A 2s A 2s A 2s A 2s A/s A/s V/s W W W V C C C V~ V~ PSKH PSKT
3
671
542
3
1
5 42
i2dt
TVJ = 45C VR = 0 TVJ = TVJM VR = 0

(di/dt)cr
TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 1 A, non repetitive, IT = ITAVM diG/dt = 1 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 s tP = 500 s

(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight
Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 148688 Keyed gate/cathode twin pins
Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches

50/60 Hz, RMS IISOL 1 mA
t = 1 min t=1s
3000 3600
Mounting torque (M6) Terminal connection torque (M8) Typical including screws
4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g
Advantages Simple mounting Improved temperature and power cycling capability Reduced protection circuits

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a
Test Conditions
TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 600 A; TVJ = 25C
Characteristic Values
40 1.32 0.8 0.68 2 3 150 220 0.25 10 200 150 2 typ. 200 760 275 0.12 0.06 0.16 0.08 mA V V m V V mA mA V mA mA
VG
10 1: IGT, TVJ = 140C
V
2: IGT, TVJ = 25C 3: IGT, TVJ = -40C
For power-loss calculations only (TVJ = 140C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ TVJ TVJ TVJ = = = = 25C -40C 25C -40C
3 2 1 1 4 5 6
VD = 2/3 VDRM VD = 2/3 VDRM
TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/s TVJ = TVJM; IT = 300 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 50 V/s; VD = 2/3 VDRM TVJ = 125C; IT, IF = 300 A; -di/dt = 50 A/s per per per per thyristor (diode); DC current module thyristor (diode); DC current module
4: PGM = 20 W IGD, TVJ = 140C 5: PGM = 60 W 6: PGM = 120 W 100 IG 101 A 102
mA s s
0.1 10-3
10-2
10-1
Fig. 1 Gate trigger characteristics
100
C A K/W K/W K/W K/W
tgd
TVJ = 25C
s
other values see Fig. 8/9
typ.
Limit
Creeping distance on surface Creepage distance in air Maximum allowable acceleration
12.7 m m 9.6 m m 50 m/s 2
10
1
Dimensions in mm (1 mm = 0.0394") PSKT
M8x20
0.01
0.1
1
PSKH
M8x20
IG
A
10
Fig. 2 Gate trigger delay time
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
10000
106
ITSM
A
8000
50 Hz 80 % VRRM TVJ = 45C TVJ = 140C
I2t A2s
VR = 0V
600 A
ITAVM 500 I
FAVM
TVJ = 45C
400 6000 105 4000 200 2000
TVJ = 140C
DC 180 sin 120 60 30
300
100
0 0.001
0.01
0.1
s t
1
104
1 t
ms
10
0
0
25
50
75
100
TC
125 C 150
Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration
600 Ptot W 500
Fig. 4 I2t versus time (1-10 ms)
Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)
RthKA K/W
400
0.06 0.1 0.2 0.3 0.4 0.6 0.8
DC 180 sin 120 60 30
300
200
100
0
0
100
200
300
400
500 A 0 ITAVM / IFAVM
25
50
75
100
125 C TA
150
3000 Ptot W 2500
RthKA K/W
2000
1500 Circuit B6 3xMCC312 or 3xPSKH 312 or
3xPSKT 312 3xMCD312
0.02 0.04 0.07 0.1 0.15 0.2 0.3
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
1000
500
0
0
200
400
600
800 A IdAVM
0
25
50
75
100
C 125 TA
150
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
3000 W 2500 Ptot 2000 RthKA K/W
1500
0.02 0.04 0.07 0.1 0.15 0.2 0.3
Circuit W3 3xPSKH 312 or 3xMCC312 or 3xPSKT 312 3xMCD312
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
1000
500
0
0
200
400
600
A IRMS
0
25
50
75
100
125 C 150 TA
0.20 K/W 0.15 ZthJC 0.10 30 60 120 180 DC
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.120 0.128 0.135 0.153 0.185
0.05
Constants for ZthJC calculation: i Rthi (K/W) 0.0058 0.031 0.072 0.0112 ti (s) 0.00054 0.098 0.54 12 1 2 3 4
0.00 10-3
10-2
10-1
100
101 t
s
102
0.25 K/W 0.20 ZthJK 0.15
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.160 0.168 0.175 0.193 0.225
0.10
0.05
30 60 120 180 DC
Constants for ZthJK calculation: i Rthi (K/W) 0.0058 0.031 0.072 0.0112 0.04 ti (s) 0.00054 0.098 0.54 12 12 1 2 3 4 5
0.00 10-3
10-2
10-1
100
101 t
s
102
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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