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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION *High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V *Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.) *Complement to Type 2SB913 APPLICATIONS *Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 110 V 100 V 6 V 8 A 12 A 2.5 W UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 Tj Junction Temperature 60 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO fT hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff Current Current-Gain--Bandwidth Product DC Current Gain CONDITIONS IC= 50mA; RBE= IC= 5mA; IE= 0 IC= 4A, IB= 8mA B 2SD1230 MIN 100 110 TYP. MAX UNIT V V 1.5 2.0 0.1 3.0 20 V V mA mA MHz IC= 4A, IB= 8mA B VCB= 80V, IE= 0 Switching Times ton tstg tf Turn-On Time Storage Time Fall Time w w. w .cn mi cse is VEB= 5V; IC= 0 IC= 4A; VCE= 5V IC= 4A; VCE= 3V 1500 IC = 4A, IB1 = -IB2= 8mA; RL= 12.5; VCC= 50V 0.6 4.8 1.6 s s s isc Websitewww.iscsemi.cn |
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